Numerical Simulation of Optoelectronic Devices 2015

Articles (35 in this collection)

1. Stepless tunable four-chip LED lighting control on a black body radiation curve using the generalized reduced gradient method

   Authors

   • Chih-Wei Lin
   • Ke-Fang Hsu
   • Jung-Min Hwang

   • Content type: OriginalPaper
   • Published: 07 May 2016

   • Article: 312

   

2. A barrier structure optimization for widening processing window in dual-band HgCdTe IRFPAs detectors

   Authors (first, second and last of 6)

   • Yiyu Chen
   • Zhenhua Ye
   • Li He

   • Content type: OriginalPaper
   • Published: 22 April 2016

   • Article: 294

   

3. Reduced basis method for the electromagnetic scattering problem: a case study for FinFETs

   Authors (first, second and last of 5)

   • Martin Hammerschmidt
   • Sven Herrmann
   • Frank Schmidt

   • Content type: OriginalPaper
   • Published: 25 March 2016

   • Article: 250

   

4. Design of asymmetrical total internal reflection optics with microstructures for lighting museum exhibits

   Authors (first, second and last of 5)

   • Ke-Fang Hsu
   • Chih-Wei Lin
   • Li-Ling Lee

   • Content type: OriginalPaper
   • Published: 16 March 2016

   • Article: 236

   

5. Theoretical analysis of direct transition in SiGeSn/GeSn strain balanced QWIP

   Authors

   • Prakash Pareek
   • Mukul K. Das

   • Content type: OriginalPaper
   • Published: 10 March 2016

   • Article: 228

   

6. Tolerance analysis of optical interconnection based on image motion

   Authors

   • Young-Gu Ju

   • Content type: OriginalPaper
   • Published: 03 March 2016

   • Article: 220

   

7. nBn HgCdTe infrared detector with HgTe(HgCdTe)/CdTe SLs barrier

   Authors (first, second and last of 9)

   • D. Benyahia
   • P. Martyniuk
   • L. Faraone

   • Content type: OriginalPaper
   • Open Access
   • Published: 29 February 2016

   • Article: 215

   

8. Two-dimensional metallic square-hole array for enhancement of mid-wavelength infrared photodetection

   Authors (first, second and last of 7)

   • Shupeng Qiu
   • Landobasa Y. M. Tobing
   • Dao-Hua Zhang

   • Content type: OriginalPaper
   • Published: 22 February 2016

   • Article: 203

   

9. Theoretical estimation of optical gain in Tin-incorporated group IV alloy based transistor laser

   Authors

   • Ravi Ranjan
   • Mukul K. Das

   • Content type: OriginalPaper
   • Published: 19 February 2016

   • Article: 201

   

10. Fundamental properties of GaN(0001) films grown directly on \(\hbox {Gd} _{2}\hbox {O} _{3}(0001)\) platforms: ab initio structural simulations

    Authors (first, second and last of 4)

    • Kuo-Cheng Liao
    • Yu-Hsien Wang
    • Huan-Chen Wang

    • Content type: OriginalPaper
    • Published: 17 February 2016

    • Article: 198

    

11. The photoinduced voltage shift behavior in three-barrier resonant tunneling structure

    Authors (first, second and last of 4)

    • W. G. Ning
    • J. Song
    • F. M. Guo

    • Content type: OriginalPaper
    • Published: 16 February 2016

    • Article: 196

    

12. Theoretical investigation on input properties of DI and CTIA readout integrated circuit

    Authors (first, second and last of 7)

    • Pengyun Song
    • Zhenhua Ye
    • Li He

    • Content type: OriginalPaper
    • Published: 10 February 2016

    • Article: 185

    

13. The photocurrent-voltage characteristic simulated of resonant tunneling photodiodes

    Authors

    • Haidong Lu
    • Bin Zhang
    • Fangmin Guo

    • Content type: OriginalPaper
    • Published: 09 February 2016

    • Article: 181

    

14. Characteristics of plasmon coupling mode in SPR based LPFG

    Authors

    • Zhengtian Gu
    • Jinlong Lan
    • Kan Gao

    • Content type: OriginalPaper
    • Published: 05 February 2016

    • Article: 171

    

15. Theoretical analysis of optical mode deflection in lithium niobate waveguide with serrated array electrodes

    Authors (first, second and last of 10)

    • Yuan Wang
    • Zhe Chen
    • Huihui Lu

    • Content type: OriginalPaper
    • Published: 03 February 2016

    • Article: 162

    

16. Robustness analysis of a device concept for edge-emitting lasers based on strained germanium

    Authors (first, second and last of 9)

    • Dirk Peschka
    • Marita Thomas
    • Thomas Koprucki

    • Content type: OriginalPaper
    • Published: 01 February 2016

    • Article: 156

    

17. Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

    Authors (first, second and last of 4)

    • Pyry Kivisaari
    • Toufik Sadi
    • Jukka Tulkki

    • Content type: OriginalPaper
    • Published: 30 January 2016

    • Article: 154

    

18. Polar, semi- and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties

    Authors

    • S. Kanta Patra
    • O. Marquardt
    • S. Schulz

    • Content type: OriginalPaper
    • Published: 29 January 2016

    • Article: 151

    

19. Light enhancement by metal-insulator-metal plasmonic focusing cavity

    Authors (first, second and last of 5)

    • J. Wen
    • W. J. Wang
    • W. Lu

    • Content type: OriginalPaper
    • Published: 29 January 2016

    • Article: 150

    

20. Thermal analysis of an SOA integrated in SG-DBR laser module

    Authors (first, second and last of 4)

    • Ximeng Han
    • Jinwei Gao
    • Yonglin Yu

    • Content type: OriginalPaper
    • Published: 27 January 2016

    • Article: 147

    

21. Efficiency enhancement of infrared light emitting diodes by combination of photonic crystals and surface plasmons

    Authors (first, second and last of 5)

    • Mengyao Li
    • Honglou Zhen
    • Ning Li

    • Content type: OriginalPaper
    • Published: 25 January 2016

    • Article: 140

    

22. A novel design on ultra-thin lateral-current-injection III–V on silicon with ultra-compact optical VIA for heterogeneous electronic–photonic integration

    Authors

    • Jing Pu
    • Qian Wang
    • Ren Min

    • Content type: OriginalPaper
    • Published: 22 January 2016

    • Article: 132

    

23. Acquisition of optimal operating temperature for epitaxial Si:P blocked-impurity-band detector based on temperature-dependent characteristics investigation

    Authors (first, second and last of 6)

    • Bingbing Wang
    • Xiaodong Wang
    • Ming Pan

    • Content type: OriginalPaper
    • Published: 22 January 2016

    • Article: 126

    

24. Photoresponse characteristics from computationally efficient dynamic model of uni-traveling carrier photodiode

    Authors

    • Senjuti Khanra
    • Abhirup Das Barman

    • Content type: OriginalPaper
    • Published: 22 January 2016

    • Article: 129

    

25. Modeling of optoelectronic devices with one-band effective mass equation: nonequilibrium Green’s function approach

    Authors

    • Andrzej Kolek

    • Content type: OriginalPaper
    • Open Access
    • Published: 21 January 2016

    • Article: 118

    

26. Scattering of light into thin film solar cells by rear located hemispherical silver nanoparticles

    Authors (first, second and last of 5)

    • Debao Zhang
    • Xifeng Yang
    • Jinfu Feng

    • Content type: OriginalPaper
    • Published: 21 January 2016

    • Article: 120

    

27. Tunable dual-band polarization filter in infrared range realized by nested asymmetrical cross-shaped resonator arrays

    Authors (first, second and last of 8)

    • B. Ni
    • X. Y. Chen
    • H. Zhou

    • Content type: OriginalPaper
    • Published: 20 January 2016

    • Article: 114

    

28. Modulation response of nanolasers: what rate equation approaches miss

    Authors (first, second and last of 5)

    • Roland Aust
    • Thorben Kaul
    • Kathy Lüdge

    • Content type: OriginalPaper
    • Published: 20 January 2016

    • Article: 109

    

29. Optimization of 1.55 μm quantum dot edge-emitting lasers for narrow spectral linewidth

    Authors

    • Marko Bjelica
    • Bernd Witzigmann

    • Content type: OriginalPaper
    • Published: 20 January 2016

    • Article: 110

    

30. Analysis of dark current and spectral response mechanisms for Si-based block-impurity-band detectors operating at terahertz regime

    Authors (first, second and last of 6)

    • Xiaodong Wang
    • Bingbing Wang
    • Ming Pan

    • Content type: OriginalPaper
    • Published: 18 January 2016

    • Article: 100

    

31. Bloch wave conditions for continuum states in the InGaAs/GaAs QWIPs

    Authors (first, second and last of 4)

    • X. Tong
    • D. Y. Xiong
    • X. Q. Lu

    • Content type: OriginalPaper
    • Published: 18 January 2016

    • Article: 98

    

32. Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers

    Authors (first, second and last of 4)

    • Wei-Wei Wang
    • Wen-Guo Ning
    • Fang-Min Guo

    • Content type: OriginalPaper
    • Published: 18 January 2016

    • Article: 99

    

33. Simulation of the optimized performance of thin-film silicon solar cells with nano-hole surface structures

    Authors (first, second and last of 5)

    • Chia-Min Chang
    • Wen-Jeng Ho
    • Wei-Chen Liao

    • Content type: OriginalPaper
    • Published: 16 January 2016

    • Article: 93

    

34. Performance analysis of polarization transformation waveguide structures for planar light circuits

    Authors

    • P. Samadian
    • T. J. Hall

    • Content type: OriginalPaper
    • Published: 16 January 2016

    • Article: 96

    

35. Design of ZnO hollow nanosphere arrays for UV absorbing transparent glasses

    Authors

    • Y. J. Yoo
    • K. S. Chang
    • Y. M. Song

    • Content type: OriginalPaper
    • Published: 14 January 2016

    • Article: 88