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Magnetic Interactions and Magnetotransport in Ge1-X TM x Te Diluted Magnetic Semiconductors

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Proceedings of the III Advanced Ceramics and Applications Conference

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Abstract

Diluted magnetic semiconductors (DMS) allows an independent control of electrical and magnetic properties by many orders of magnitude via changes in the technological parameters of the growth or post growth treatment of the compound. DMS compounds are usually developed on the basis of a III−V or II−VI semiconductor matrix into which transition metal (TM) or rare earth ions are introduced on a level of several atomic percent. IV−VI based DMS, in particular Ge1-x TM x Te alloys, possess many advantages over widely studied Ga1-x Mn x As. The carrier concentration and the amount of TM ions can be controlled independently. Moreover, the solubility of TM ions in GeTe is very high allowing growth of homogeneous Ge1-x TM x Te solid solutions over a wide range of chemical composition. Itinerant ferromagnetism can be controlled in a wide range of values reaching the Curie temperatures with a maximum of about 200 K for bulk Ge1-x Mn x Te with x = 0.5. The most important aspects of the current progress in understanding the structural, electrical, and magnetic properties of the selected representatives of Mn- and Cr-alloyed GeTe based DMS systems are reviewed. The present state of the studies of the physical mechanisms of the ferromagnetism and spin-glass-like states in Ge1-x TM x Te are described as well as the explanation of the nature of the magnetotransport effects such as negative magnetoresistance and anomalous Hall effect in Ge1-x TM x Te solid solutions.

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Acknowledgment

The research was partly supported by the Foundation for Polish Science—HOMING PLUS Programme co-financed by the European Union within European Regional Development Fund. The research was partly financed by the National Center for Science of Poland under Decision No. DEC-2012/05/D/ST3/03161.

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Authors and Affiliations

  1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668, Warsaw, Poland

    L. Kilanski, R. Szymczak, E. Dynowska, M. Górska, A. Podgórni & W. Dobrowolski

  2. Institute of Materials Science Problems, Ukrainian Academy of Sciences, Chernivtsi, Ukraine

    V. E. Slynko & E. I. Slynko

  3. Institute of Physics, University of Belgrade, 11080, Belgrade, Republic of Serbia

    M. Romčević & N. Romčević

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  1. L. Kilanski
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Correspondence to L. Kilanski .

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Editors and Affiliations

  1. Department of Materials, Faculty of Engg, Imperial College London, London, United Kingdom

    William E. Lee

  2. University of Stuttgart, Stuttgart, Germany

    Rainer Gadow

  3. Faculty of Electronic Engineering, University of Nis, Nis, Serbia

    Vojislav Mitic

  4. Institute of Technical Sciences, Serbian Academy of Sciences and Arts, Belgrade, Serbia

    Nina Obradovic

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Kilanski, L. et al. (2016). Magnetic Interactions and Magnetotransport in Ge1-X TM x Te Diluted Magnetic Semiconductors. In: Lee, W., Gadow, R., Mitic, V., Obradovic, N. (eds) Proceedings of the III Advanced Ceramics and Applications Conference. Atlantis Press, Paris. https://doi.org/10.2991/978-94-6239-157-4_6

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  • DOI: https://doi.org/10.2991/978-94-6239-157-4_6

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