Abstract
The frequencies of the spectral lines in crystals can be shifted by perturbations and when levels are degenerate, splitting can occur. Discrete levels of impurities and defects are characterized by their energies and their widths, which determine the positions and the FWHMs of the transitions. The degeneracy of the levels is a less obvious parameter related to their symmetry or to the symmetry of the centres in the crystal, and its consequences can only be derived from optical measurements under external perturbations. It has been shown in Chap. 5 that the multi-valley degeneracy of the CB of indirect-band-gap semiconductors translated into the same degeneracy of the EM donor states and that this degeneracy was partially lifted by valley-orbit coupling. Similarly, due to the structure of the VB maximum, the EM acceptor states also present an intrinsic electronic degeneracy. These degeneracies are the same whatever the atomic structure of the centres because they are due to the band structure of the semiconductor. Another form of degeneracy is due to the atomic symmetry of the centres with equivalent orientations in the crystal, and is logically called orientational degeneracy. An example is the <111> oriented chalcogen substitutional donor pairs in silicon, with a fourfold orientational degeneracy. In the preceding chapters, examples of the splitting of the spectra of impurities in crystals under different perturbations have been given. A more systematic treatment of these perturbations, which can be mechanical, electrical or magnetic, is considered in this chapter.
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References
A. Abragam, M.H.L. Pryce, Proc. R. Soc. Lond. A205, 135 (1951)
R.L. Aggarwal, A.K. Ramdas, Phys. Rev.137, A602 (1965)
N.I. Agladze, A.S. Kaminskii, A.N. Safonov, Defects Diff. Forum103–105, 299 (1993)
B.A. Andreev, T.M. Lifshits, High Purity Subst. (Russia)5, 7 (1990)
T.R. Anthony, A.D. Alvarenga, M. Grimditch, H. Kim, A.K. Ramdas, S. Rodriguez, R. Vogelgesang, Curr. Sci.4, 317 (1998)
S.N. Artemenko, A.A. Kal’fa, Sh.M. Kogan, V.I. Sidorov, Sov. Phys. Semicond.8, 1405 (1975)
R. Atzmüller, M. Dahl, J. Kraus, G. Schaack, J. Schubert, J. Phys. C3, 6775 (1991)
R.J. Baker, P. Fisher, Solid State Commun.99, 679 (1996)
R.J. Baker, P. Fisher, R.E.M. Vickers, E.E. Haller, W.L. Hansen, inProceedings of 7th International Conference on Shallow-Level Centers, Amsterdam 17–19 July 1996, (eds). C.A.J. Ammerlaan, B. Pajot (World Scientific, Singapore, 1997) pp. 357–362
W. Baltensperger, Philos. Mag.44, 1355 (1953)
P.I. Baranskii, V.V. Kolomoets, Phys. Stat. Sol. B45, K55 (1971)
J. Bardeen, W. Shockley, Phys. Rev.80, 72 (1950)
R. Barrie, K. Nishikawa, Can. J. Phys.41, 1823 (1963)
K. Bergman, G. Grossmann, H.G. Grimmeiss, M. Stavola, R.E. McMurray, Phys. Rev. B39, 1104 (1989)
A.K. Bhattacharjee, S. Rodriguez, Phys. Rev. B6, 3836 (1972)
G.L. Bir, E.I. Butikov, G.E. Pikus, J. Phys. Chem. Solids24, 1467 (1963)
G.L. Bir, E.I. Butikov, G.E. Pikus, J. Phys. Chem. Solids24, 1475 (1963)
G.L. Bir, G.E. Pikus,Symmetry and Strain-Induced Effects in Semiconductors (Wiley, New York, 1974)
B. Bleaney, Proc. Phys. Soc.73, 939–942.Corrig.ibid.74, 493 (1959)
W.S. Boyle, J. Phys. Chem. Solids8, 321 (1959)
W.S. Boyle, R.E. Howard, J. Phys. Chem. Solids19, 181 (1961)
J. Broeckx, Phys. Rev. B43, 9643 (1991)
J. Broeckx, P. Clauws, K. Van den Steen, J. Vennik, J. Phys. C12, 4061 (1979)
J. Broeckx, J. Vennik, Phys. Rev. B35, 6165 (1987)
J. Broeckx, P. Clauws, J. Vennik, J. Phys. C19, 511 (1986)
H. Brooks,Theory of the Electrical Properties of Germanium and Silicon. In: L. Marton (ed) Advances in Electronics and Electron Physics, vol. 7 (Academic, New York, 1955) pp. 85–182
R. Buczko, Nuovo Cimento9D, 669 (1987)
A. Burenkov Yu, S.P. Nikanorov, A.V. Stepanov, Sov. Phys. Solid State12, 1940 (1971)
N.R. Butler, P. Fisher, A.K. Ramdas, Phys. Rev. B12, 3200 (1975)
N. Casanova, E. Gheeraert, E. Bustarret, S. Koizumi, T. Teraji, H. Kanda, J. Zeman, Phys. Stat. Sol. A186, 291 (2001)
R.L. Causley, R.A. Lewis, Physica B302–303, 327 (2001)
H.R. Chandrasekhar, P. Fisher, A.K. Ramdas, S. Rodriguez, Phys. Rev. B8, 3836 (1973)
H.R. Chandrasekhar, A.K. Ramdas, S. Rodriguez, Phys. Rev. B12, 5780 (1975)
H.R. Chandrasekhar, A.K. Ramdas, S. Rodriguez, Phys. Rev. B14, 2417 (1976)
J.M. Cherlow, R.L. Aggarwal, B. Lax, Phys. Rev. B7, 4547 (1973)
Y.S. Choi, J.S. Lim, T. Numata, T. Nishida, S.E. Thompson, J. Appl. Phys.102, 104507/1–5 (2007)
K. Colbow, Can. J. Phys.41, 1801 (1963)
R.A. Cooke, R.J. Nicholas, R.A. Stradling, J.C. Portal, S. Askenazy, Solid State Commun.26, 11 (1978)
A. Dargys, S. Žurauskas, S. Žurauskiené, Appl. Phys. A52, 13 (1991)
A. Debernardi, A. Baldereschi, M. Fanciulli, Phys. Rev. B74, 035202 (2006)
H.Y. Fan, P. Fisher, J. Phys. Chem. Solids8, 270 (1959)
G. Feher, J.C. Hensel, E.A. Gere, Phys. Rev. Lett.5, 309 (1960)
P. Fisher, H.Y. Fan, Phys. Rev. Lett.2, 456 (1959)
P. Fisher, G.J. Takacs, R.E.M. Vickers, A.D. Warner, Phys. Rev. B47, 12 999 (1993)
P. Fisher, R.E.M. Vickers, D.C. Lau, Surface Rev. Lett.10, 277 (2003)
C.A. Freeth, P. Fisher, P.E. Simmonds, Solid State Commun60, 175 (1986)
T. Friedrich, J. Kraus, M. Meininger, G. Schaack, W.O.G. Schmitt, J. Phys. Cond. Matter.6, 4307 (1994)
M. Friesen, Phys. Rev. Lett.94, 186403/1–4 (2005)
E.M. Gershenzon, G.N. Gol’tsman, N.G. Ptitsina, Sov. Phys. JETP49, 355 (1979)
V.G. Golubev, V.I. Ivanov-Omsky, G.I. Kropotov, Solid State Commun.42, 869 (1982)
X. Goncharov, Sov. Phys. Semicond.11, 556 (1977)
G.M. Guichar, C. Sebenne, F. Proix, M. Balkanski, Phys. Rev. B5, 422 (1972)
R.R. Haering, Can. J. Phys.36, 1161 (1958)
J.J. Hall, Phys. Rev.128, 68 (1962)
J.J. Hall, Phys. Rev.161, 756 (1967)
S.M. Harris, E.W. Prohofsky, Phys. Rev.170, 749 (1968)
H. Hasegawa, Phys. Rev.129, 1029 (1963)
J.C. Hensel, G. Feher, Phys. Rev.129, 1041 (1963)
J.C. Hensel, K. Suzuki, Phys. Rev. B9, 4219 (1974)
C. Herring, E. Vogt, Phys. Rev.101, 944 (1956)
L.T. Ho, Chin. J. Phys.16, 87 (1978)
K. Horii, Y. Nisida, J. Phys. Soc. Jpn.31, 783 (1971)
A.E. Hughes, W.A. Runciman, Proc. Phys. Soc.90, 827 (1967)
K.M. Itoh, J. Muto, W. Walukiewicz, J.W. Beeman, E.E. Haller, H. Kim, A.J. Mayur, M.D. Sciacca, A.K. Ramdas, R. Buczko, J.W. Farmer, V.I. Ozhogin, Phys. Rev. B53, 7797 (1996)
I.G. Ivanov, E. Janzén, inSilicon Carbide and Related Materials 2006, (eds). N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall, Trans Tech. Mater. Sci. Forum556–557, 435 (2007)
J.D. Jackson,Classical Electrodynamics, 2nd edn. (Wiley, New York, 1975) p. 102
C. Jagannath, Z.W. Grabowski, A.K. Ramdas, Phys. Rev. B23, 2082 (1981)
C. Jagannath, A.K. Ramdas, Phys. Rev. B23, 4426 (1981)
J.M. Kahn, R.E. McMurray, E.E. Haller, L.M. Falicov, Phys. Rev. B36, 8001 (1987)
A.A. Kal’fa, Sh.M. Kogan, Sov. Phys. Semicond.6, 1839 (1973)
B.E. Kane, Nature (London)393, 133 (1998)
E.O. Kane, Phys. Rev.119, 40 (1960)
A.A. Kaplyanskii, Opt. Spectrosc. (USSR)16, 329 (1967); J. Phys. Colloque C4, suppl. no 8–928, C4 (1964)
A.A. Kaplyanskii, Opt. Spectrosc. (USSR)16, 557 (1964)
V.A. Karasyuk, M.L.W. Thewalt, S. An, E.C. Lightowlers, A.S. Kaminskii, Phys. Rev. B54, 10543 (1996)
J. Kato, K.M. Itoh, E.E. Haller, Physica B302–303, 1 (2001)
A.G. Kazanskii, P.L. Richards, E.E. Haller, Solid State Commun.24, 603 (1977)
H. Kim, Z. Barticevic, A.K. Ramdas, S. Rodriguez, M. Grimsditch, T.R. Anthony, Phys. Rev. B62, 8038 (2000)
L.C. Kimerling, inOxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, (eds). J.C. Mikkelsen, Jr, S.J. Pearton, J.W. Corbett, S.J. Pennycook, Mater. Res. Soc. Symp. Proc.59, 83 (1986)
L.C. Kimerling, J.L. Benton, Appl. Phys. Lett.39, 410 (1981)
R.F. Kirkman, R.A. Stradling, P.J. Lin-Chung, J. Phys. C11, 419 (1978)
W.H. Kleiner, L.M. Roth, Phys. Rev. Lett.2, 334 (1959)
Sh.M. Kogan, N.V. Lien, Sov. Phys. Semicond.15, 26 (1981)
W. Kohn, inSolid State Physics Advances in Research and Applications, vol. 5 (eds). F. Seitz, D. Turnbull (Academic, London, 1957), pp. 257–320
A. Köpf, K. Lassmann, Phys. Rev. Lett.69, 1580 (1992)
A.A. Kopylov, S.P. Medvedev, A.N. Pikhtin, Sov. Phys. Semicond.13, 924 (1979)
W.E. Krag, W.H. Kleiner, H.J. Zeiger, Phys. Rev. B33, 8304 (1986)
L.D. Landau, E.M. Lifshitz,Quantum Mechanics Non Relativistic Theory, 3rd edn. (Pergamon, Oxford, 1962) p. 251
D.M. Larsen, Phys. Rev. B8, 535 (1973)
D.M. Larsen, Phys. Rev. B13, 1681 (1976)
K. Larsson, H.G. Grimmeiss, J. Appl. Phys.63, 4524 (1988)
L.D. Laude, F.H. Pollack, M. Cardona, Phys. Rev. B3, 2623 (1971)
B. Lax, L.M. Roth, S. Zwerdling, J. Phys. Chem. Solids8, 311 (1959)
M. Lax, E. Burstein, Phys. Rev.100, 592 (1955)
K.M. Lee, J. Trombetta, G.D. Watkins,Microscopic Identification of Electronic Defects in Semiconductors, (ed). N.M. Johnson, G.D. Watkins, Mater. Res. Soc. Symp. Proc.46, 263 (1985)
N. Lee, D.M. Larsen, B. Lax, J. Phys. Chem. Solids35, 401 (1974)
R.A. Lewis, P. Fisher, N.A. McLean, Aust. J. Phys.47, 329 (1994)
R.A. Lewis, Y.J. Wang, M. Henini, Phys. Rev. B67, 235204 (2003)
M. Li, J. Chen, X. Zhao, Y. Li, inDefects in Semiconductors 14, (ed). H.J. von Bardeleben, Trans Tech. Mater. Sci. Forum10–12, 469 (1986)
J.S. Lim, X. Yang, T. Nishida, S.E. Thomson, Appl. Phys. Lett.89, 073509 (2006)
P.J. Lin-Chung, R.F. Wallis, J. Phys. Chem. Solids30, 1453 (1969)
J.S. Lomont,Application of Finite Groups (Academic, New York, 1959)
Mendelson and James, J. Phys. Chem. Solids25, 729 (1964)
F. Merlet, B. Pajot, Ph. Arcas, A.M. Jean-Louis, Phys. Rev. B12, 3297 (1975)
J. Michel, J.R. Niklas, J.M. Spaeth, Phys. Rev. B40, 1732 (1989)
L.V. Mizrukhin, L.I. Khirunenko, V.I. Shakhovtsov, V.K. Shinkarenko, V.I. Yashnick, Sov. Phys. Semicond.23, 441 (1989)
W.J. Moore, J Phys. Chem. Solids32, 93 (1971)
Y.M. Mu, J.P. Peng, P.L. Liu, S.C. Shen, J.B. Zhu, Phys. Rev. B48, 10864 (1993)
H. Navarro, E.E. Haller, F. Keilman, Phys. Rev. B37, 10822 (1988)
H. Neubrand, Phys. Stat. Sol. B86, 269 (1978)
R. Newman, Phys. Rev.103, 103 (1956)
S.P. Nikanorov, A. Burenkov Yu, A.V. Stepanov, Sov. Phys. Sol. State13, 2516 (1971)
K. Nishikawa, R. Barrie, Can. J. Phys.41, 1135 (1963)
Y. Nisida, K. Horii, J. Phys. Soc. Jpn.31, 776 (1971)
A. Onton, P. Fisher, A.K. Ramdas, Phys. Rev.163, 686 (1967)
B. Pajot, F. Merlet, G. Taravella, Can. J. Phys.50, 2186 (1972)
B. Pajot, F. Merlet, G. Taravella, Ph. Arcas, Can. J. Phys.50, 1106 (1972)
S.G. Pavlov, H.W. Hübers, P.M. Haas, J.N. Hovenier, T.O. Klaassen, R.Kh. Zhukavin, V.N. Shastin, D.A. Carder, B. Redlich, Phys. Rev. B78, 165201 (2008)
S.G. Pavlov, R.Kh. Zhukavin, E.E. Orlova, V.N. Shastin, V.N. Kirsanov, H.W. Hübers, K. Auen, H. Riemann, Phys. Rev. Lett.84, 5220 (2000)
R.E. Peale, K. Muro, A.J. Sievers, F.S. Ham, Phys. Rev. B37:10829 (1988)
R.E. Peale, R.M. Hart, A.J. Sievers, F.S. Ham,Shallow Impurities in Semiconductors 1988, (ed). B. Monemar, Inst. Phys. Conf. Ser. 95, Bristol, 1989, pp. 89–94
A.K. Ramdas, P.M. Lee, P. Fisher, Phys. Lett.7, 99 (1963)
A.K. Ramdas, S. Rodriguez, Rep. Progr. Phys.44, 1297 (1981)
A.K. Ramdas, S. Rodriguez, inThe Spectroscopy of Semiconductors, (eds). D.G. Seiler, C.L. Littler, vol. 36 of the Series Semiconductors and Semimetals (Academic, San Diego, 1992), pp. 137–221
J.H. Reuszer, P. Fisher, Phys. Rev.140, A245 (1965)
S. Rodriguez, P. Fisher, F. Barra, Phys. Rev. B5, 2219 (1972)
S. Rodriguez, T.D. Schultz, Phys. Rev.178, 1252 (1969)
W.O.G. Schmitt, E. Bangert, G. Landwehr, J. Phys. Cond. Matter3, 6789 (1991)
S.C. Shen, Solid State Commun.93, 357 (1995)
S.C. Shen, Z.Y. Yu, Y.X. Huang, Int. J. Infrared Millim. Waves11, 595 (1990)
T. Shimizu, N. Tanaka, Phys. Lett. A45, 5 (1973)
G.D.J. Smit, S. Rogge, J. Caro, T.M. Klapwijk, Phys. Rev. B70, 035206 (2004)
H.P. Soepangkat, P. Fisher, Phys. Rev. B8, 870 (1973)
M. Stavola, Physica146B, 187 (1987)
M. Stavola, inProc. NATO Advanced Workshop on the Early Stages of Oxygen Precipitation in Silicon, (ed). R. Jones, NATO ASI Series 3, vol. 17, High Technology (Kluwer, Dordrecht, 1996) pp. 223–242
M. Stavola, K.M. Lee, Mater. Res. Soc. Symp. Proc.59, 95 (1986)
M. Stavola, K.M. Lee, J.C. Nabity, P.E. Freeland, L.C. Kimerling, Phys. Rev. Lett.54, 2639 (1985)
K. Suzuki, M. Okazaki, H. Hasegawa, J. Phys. Soc. Jpn.19, 930 (1964)
G. Taravella, Ph. Arcas, B. Pajot, Solid State Commun.13, 353 (1973)
V.H. Tekippe, H.R. Chandrasekhar, P. Fisher, A. Ramdas, Phys. Rev. B6, 2348 (1972)
M.L.W. Thewalt, M. Steger, A. Yang, N. Stavrias, M. Cardona, H. Riemann, N.V. Abrosimov, M.F. Churbanov, A.V. Gusev, A.D. Bulanov, I.D. Kovalev, A.K. Kaliteevskii, O.N. Godisov, P. Becker, H.J. Pohl, J.W. Ager, E.E. Haller, Physica B401–402, 587 (2007)
H. Tokumoto, T. Ishiguro, Phys. Rev. B15, 2099 (1977)
R.E.M. Vickers, P. Fisher, C.A. Freeth, Solid State Commun.65, 271 (1988)
R.E.M. Vickers, R.A. Lewis, P. Fisher, Y.J. Wang, Phys. Rev. B77, 115212 (2008)
N.Q. Vinh, P.T. Greenland, K. Litvinenko, B. Redlich, A.F.G. van der Meer, S.A. Lynch, M. Warner, A.M. Stoneham, G. Aeppli, D.J. Paul, C.R. Pidgeon, B.N. Murdin, Proc. Natl. Acad. Sci. (USA)105, 10649 (2008)
P. Wagner, H. Gottschalk, J. Trombetta, G.D. Watkins, J. Appl. Phys.61, 346 (1987)
J.J. White, Can. J. Phys.45, 2695 (1967)
D.K. Wilson, G. Feher, Phys. Rev. B124, 1068 (1961)
D.J. Wolford, J.A. Bradley, Solid State Commun.53, 1069 (1985)
Y. Yafet, D.G. Thomas, Phys. Rev.131, 2405 (1963)
E.R. Youngdale, R.L. Aggarwal, Phys. Rev. B37, 2514 (1988)
P. Zeeman, Philos. Mag.45, 197 (1898)
S. Žurauskas, A. Dargys, N. Žurauskiené, Phys. Stat. Sol. B173, 647 (1992)
S. Zwerdling, K.J. Button, B. Lax, Phys. Rev.118, 975 (1960)
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Pajot, B. (2009). Effects of Perturbations. In: Optical Absorption of Impurities and Defects in SemiconductingCrystals. Springer Series in Solid-State Sciences, vol 158. Springer, Berlin, Heidelberg. https://doi.org/10.1007/b135694_8
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