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Optical Absorption of Impurities and Defects in SemiconductingCrystals pp 281–345Cite as

EM Acceptor Spectra

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Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 158))

Abstract

The first report of the absorption spectrum of acceptors in semiconductors is probably the paper by Burstein et al. [26], showing the LHeT transmission spectra of two p-type silicon samples. In one of these spectra, broad electronic lines, attributed to boron, could be seen at 0.034, 0.040 and 0.043 eV while in the other, from a nominally undoped sample, lines near 0.055 and 0.06 eV were observed, now known to be due to the aluminium acceptor. Since then, many acceptors have been identified in silicon and other semiconductor crystals and with the same technological incentive as for donors, their optical spectroscopy has been widely used to characterize them, evaluate their concentrations, provide physical insight into the VB structures of the crystals and more recently evaluate the effect of impurity isotope broadening in quasi-monoisotopic crystals.

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Pajot, B. (2009). EM Acceptor Spectra. In: Optical Absorption of Impurities and Defects in SemiconductingCrystals. Springer Series in Solid-State Sciences, vol 158. Springer, Berlin, Heidelberg. https://doi.org/10.1007/b135694_7

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