Abstract
It is suggested that for the theoretical treatment of p, n contacts the emission current originating at the boundary by thermal pair generation is especially suitable for the discussion of current characteristics and for comparison with pair generation in the bulk of either semiconductor.
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Literature
ZS. f. Phys. 118 (1942), S. 539.
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© 1954 Friedr. Vieweg & Sohn
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Schottky, W. (1954). Diskussionsbeitrag Schottky zum Referat Poganski. In: Halbleiterprobleme. Advances in Solid State Physics, vol HP1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0116878
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DOI: https://doi.org/10.1007/BFb0116878
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