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Festkörperprobleme 20 pp 259–313Cite as

Present status and problems of X-ray lithography

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Part of the book series: Advances in Solid State Physics ((ASSP,volume 20))

Abstract

Very intense technological efforts for increasing the density of integration of semiconductor devices have been made in the development of new and economical lithography methods for structures below 2 μm. The lithography methods used up to now in production are working with UV radiation in the region near 400 nm. The resolution limit due to Fresn'el diffraction allows the replication of structure dimensions down to 3–4 μm. A further improvement of the optical lithography (introduction of demagnifying projection printing instead of 1∶1 proximity exposure) probably will lead to powerful production machines enabling the reproduction of structures with dimensions down to 1 μm. On the other hand, the expenditure increases rapidly when decreasing the resolution limits. For dropping the structure size below 1 μm, the alternative lithography methods are electron-beam writing and X-ray lithography. Additionally, an application of these methods for larger structures could be furthered by an improvement of the yield.

X-ray lithography is a direct further development of 1∶1 proximity printing, with the help of a mask, by drastically lowering the wavelength. This means the maintenance of a relatively simple process, also in the case of very small structures. But an important condition, if X-ray lithography is to be a practical method, is the availability of an economical X-ray source in the wavelength region of 1 nm with nearly parallel radiation. Because at this wavelength there are no problems with Fresn'el diffraction, and the distortions caused by the secondary electrons generated in the resist are much lower compared with electron-beam writing, structures down to 0.1 μm are achievable with high aspect ratios.

Although the very good replication features have been confirmed in many experiments there are many problems to be solved, especially concerning the radition source, the resist- and the masktechnology. The application of X-ray lithography could mainly provide advantages in the mass production of VLSI devices with constant design. The domain of e-beam writing, besides mask production, could be the production of circuits with frequent changes in design (e.g., in the phase of circuit development).

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  1. Fraunhofer-Institut für Festkörpertechnologie, München, Germany

    Anton Heuberger, Hans Betz & Siegfried Pongratz

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  1. Anton Heuberger
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Heuberger, A., Betz, H., Pongratz, S. (1979). Present status and problems of X-ray lithography. In: Treusch, J. (eds) Festkörperprobleme 20. Advances in Solid State Physics, vol 20. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0116745

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