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Laser annealing of semiconductors

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Festkörperprobleme 20

Part of the book series: Advances in Solid State Physics ((ASSP,volume 20))

Abstract

The basic liquid phase and solid phase epitaxial regrowth mechanisms involved in laser-induced surface reconstruction are reviewed. The structure, morphology and physical properties of ion-implantation damaged and amorphous and polycrystalline deposited layers are discussed in the context of how this many faceted and rapidly advancing technology can be applied to both semiconductor materials engineering and basic problems in solid state materials science.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany

    George A. Rozgonyi

  2. Bell Laboratories, Murray Hill, N.J., USA

    George A. Rozgonyi

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  1. George A. Rozgonyi
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J. Treusch

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© 1979 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Rozgonyi, G.A. (1979). Laser annealing of semiconductors. In: Treusch, J. (eds) Festkörperprobleme 20. Advances in Solid State Physics, vol 20. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0116744

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  • DOI: https://doi.org/10.1007/BFb0116744

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  • Print ISBN: 978-3-528-08026-6

  • Online ISBN: 978-3-540-75365-0

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