Abstract
In this paper electronic structure theory for semiconductor surfaces and interfaces is reviewed with particular emphasis on recent applications of the scattering theoretical method (STM) to a variety of realistic systems. Easy intelligible and physically appealing pictures of general surface and interface electronic properties are developed in the discussion of the results by directly correlating the changes in bonds at surfaces or interfaces with the resulting changes in bands and densities of states. Bound states, resonances and antiresonances are introduced and discussed on a very intuitive level and the scattering theoretic method is shown to be a natural and thus very powerful technique to calculate a wealth of experimentally interesting information in a very efficient way. The systems discussed in this article range from ideal, relaxed and reconstructed semiconductor surfaces over interfaces in heterojunctions, overlayer systems and superlattices to defects at surfaces or interfaces. Comparison with experimental data is made wherever possible.
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References
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Pollmann, J. (1979). On the electronic structure of semiconductor surfaces, interfaces and defects at surfaces or interfaces. In: Treusch, J. (eds) Festkörperprobleme 20. Advances in Solid State Physics, vol 20. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0116742
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