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Optical and ESR spectroscopy of deep defects in III-V semiconductors

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Festkörperprobleme 20

Part of the book series: Advances in Solid State Physics ((ASSP,volume 20))

Abstract

A survey of recent progress on the assessment of deep defects in GaP, GaAs and, InP by electron spin resonance (ESR) and optical spectroscopy is presented. The stoichiometric defects sofar identified by ESR, the antisite center PGa, and the isolated gallium vacancy are treated in detail. The present understanding of the deep states introduced by oxygen in GaP is reviewed. Besides oxygen the most common, inadvertent deep impurities in III-V compounds are the 3d-transition elements. Their ESR and optical spectra will be discussed, also in connection with their often deleterious influence on device performance.

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  1. Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, Germany

    Ulrich Kaufmann & Jürgen Schneider

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  1. Ulrich Kaufmann
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  2. Jürgen Schneider
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J. Treusch

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© 1979 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Kaufmann, U., Schneider, J. (1979). Optical and ESR spectroscopy of deep defects in III-V semiconductors. In: Treusch, J. (eds) Festkörperprobleme 20. Advances in Solid State Physics, vol 20. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0116741

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