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Airapetyants, A. V., A. V. Kogan, N. M. Reinov, S. M. Ryvkin andJ. A. Sokolov: Germaniumn-p-α-counters use of low temperatures (russ.). Zhur. Tekh. Fiz.27, 1599 (1957). Amerik. Übers. in Soviet Phys. — Techn. Phys.2, 1482 (1957).
——, andS. M. Ryvkin: Germanium electron-hole alphacounters characteristics and operation mechanism (russ.). Zhur. Tekh. Fiz.27, 95 (1957). Amerik. Übers. in Soviet Phys. — Techn. Phys.2, 79 (1957).
Amsel, G.: Experiments withn-p junction detectors. SNPD, S. 35.
——P. Baruck etO. Smulkowski: Détecteur de particules lourdes a jonctionn-p au silicium. Compt. rend.250, 1468 (1960) oder Nuclear Instr.8, 92 (1960), oder SSRD, S. 21.
Anderson, O. L., H. Christensen andP. Andreatch: Technique for connecting electrical leads to semiconductors. J. Appl. Phys.28, 923 (1957).
Arechi, F. T., G. Gavalleri, E. Gatti andV. Svelto: Signal to noise ratio and resolving time in pulse amplifiers. SNPD, S. 226.
Babcock, R. V.: Fast neutron damage to silicon junction particle detectors. SSRD, S. 98.
——R. E. Davis, S. L. Ruby, K. H. Sun andE. D. Wolley: Coated semiconductor is tiny neutron detector. Nucleonics17/4, 116 (1959) und Westinghouse Scient. Paper 5806–6600 — 13 (1958).
Backenstoss, G.: Evaluation of the surface concentration of diffused layers in silicon. Bell. System Tech. J.37, 699 (1958).
Baily, N. A., andJ. W. Mayer:p-n junction semiconductor radiation detector for use with beta- and gamma-ray emitting isotopes. Bull. Am. Phys. Soc.6, 107 (1961) oder Radiology76, 116 (1961).
Baldinger, E., W. Czaja u.A. Z. Farooqi:p-n-Übergänge als Festkörper-Ionisations-Kammern. Helv. Phys. Acta33, 551 (1960).
—— —— On the energy expended per electron-hole-pair produced inp-n-junction-detectors. Nuclear Instr. Methods10, 237 (1961).
Batdorf, R. L., andF. M. Smits: Diffusion of impurities into evaporating silicon. J. Appl. Phys.30, 259 (1959).
Benneth, W. R.: Electrical noise. New York: McGraw-Hill Book Co. 1960.
Benveniste, J., R. Booth, A. Mitchell, C. Schrader andJ. Zenger: Solid State Detectors II. Livermore Rad. Lab. Univ. of California, Berkeley, Rept. on Nucl. Phys. 148 (1960).
Bilaniuk, O. M., andB. B. Marsh: Multi-channel unit of junction counters for nuclear spectroscopy. Bull. Am. Phys. Soc.5, 226 (1960).
Bittel, H.: Schwankungserscheinungen bei der Elektrizitätsleitung in Festkörpern. Ergeb. exakt. Naturw.31, 84 (1959).
Blankenship, J. L.: Diskuss. Bem. SNPD, S. 6.
—— Silicon surface barrier spectrometers. Proc. of the sixth tripartite instrumentation conf., Chalk River, Ontario, Pt.5, 75 (1959).
-- Surface barrier detectors. SNPD, S. 43.
——, andC. J. Borkowski: Semiconductor surface barrier counters of improved energy resolution. Bull. Am. Phys. Soc.5, 38 (1960).
-- -- Performance of silicon surface barrier detectors with charge sensitive amplifiers. SSRD, S. 17.
—— —— Silicon surface-barrier nuclear particle spectrometer. I.R.E. Trans. Nucl. Sci. NS-7, Nr. 2–3, 190 (1960).
Bok, J., etR. Schuttler: Utilisation de dispositifs à semi-conducteurs pour la détection et la dosimétrie de particules nucléaires. Réunion du Groupe Dosimetrie d'Euratom le 13 Janvier 1961 à Bruxelles.
Bomal, R., L. Koch, N. van Dong etC. Schneider: Utilisation des semiconducteurs comme détecteurs de rayonnements nucléaires. Tagungsberichte IAEA, Paris 1958, S. 137.
Bond, W. L., andF. M. Smits: The use of an interference microscope for measurement of extremely thin surface layers. Bell. System Tech. J.35, 1209 (1956).
Bothe, W.: Zur Theorie der Neutronensonden. Z. Physik120, 437 (1943).
Briggs, H.: Infra-red absorption in silicon. Phys. Rev.77, 727 (1950).
—— Infra-red absorption in high purity germanium. J. Opt. Soc. Am.42, 686 (1952).
Bromley, D. A.: Diskuss. Bem. SNPD, S. 46.
-- Semiconductor detectors in nucelar physics. SNPD, S. 61.
——J. A. Kuehner andE. Almqvist: Resonant elastic scattering of C12 by carbon. Phys. Rev. Letters4, 365 (1960).
Brown, W. L.: Introduction to semiconductor particle detectors. SSRD, S. 2.
Brown, D. C., andB. P. Faraday: A transistorized radiation monitor. Nuclear Instr.1, 133 (1957).
Buck, T. M.: Surface effects on silicon particle detectors. SNPD, S. 111.
Carlson, R. O.: Gold on silicon surface. J. Appl. Phys.29, 1001 (1958).
Chase, R. L., W. A. Higinbotham andG. L. Miller: Amplifiers for use withp-n junction radiation detectors. SSRD, S. 147
Chetham-Strode, A., J. R. Tarrant andR. J. Silva: Application of silicon detectors to alpha particle spectroscopy. SSRD, S. 59.
Chynoweth, A. G.: Multiplication processes inp-n- junctions. SNPD, S. 171.
—— Uniform siliconp-n junctions. II. Ionisation rates for electrons. J. Appl. Phys.31, 1161 (1960).
-- Energy required for electron-hole pair formation in silicon. SNPD, S. 95.
——, andK. G. McKay: Threshold energy for electron-hole pair-production by electrons in silicon. Phys. Rev.108, 29 (1957).
—— —— Internal field emission in siliconp-n junction. Phys. Rev.106, 418 (1957).
Collins, C. B., R. O. Carlson andC. J. Gallagher: Properties of golddoped silicon. Phys. Rev.105, 1168 (1957).
Conwell, E. M.: Properties of silicon and germanium II. Proc. I.R.E.46, 1281 (1958).
Crawford, G. W.: Cosmic radiation measurement problems. SNPD, S. 57.
Cummerow, R. L.: Photovoltaic effect inp-n junctions. Phys. Rev.95, 16 (1954).
Curtis, O. L.: Diskuss. Bem. SNPD, S. 133.
Dabbs, J. W. T., F. J. Walter andL. D. Roberts: Broad-area germaniump-n-junction counters. ORNL Report2501, 73 (1958).
Dash, W. C., andR. Newman: Intrinsic absorption in single crystal Ge and Si at 77°K and 300°K. Phys. Rev.99, 1151 (1955).
Davis, W. D.: Silicon crystal counters. J. Appl. Phys.29, 231 (1958).
Dearnaley, G.: Diskuss. Bem. SNPD, S. 7.
-- Experience at harwell with surface-barrier detectors. SSRD, S. 11.
--, andA. B. Whitehead: Surface barrier charged-particle detectors. A.E.R.E.-Report R3278 (1960).
Donovan, P. F.: Paint-on particle detectors (Recipe No. 2). SNPD, S. 268.
-- Diskuss. Bem. SNPD, S. 133.
——G. L. Miller andB. M. Foreman: Application of thick-depletion-layer siliconp-n-junctions to proportional detection of gamma radiation and penetrating nuclear particles. Bull. Am. Phys. Soc.5, 355 (1960).
Drahokoupil, J., M. Malkovská andJ. Tauc: Quantum efficiency of the photo electric effect in germanium for X-rays. Czech. J. Phys.7, 57 (1957).
Elliot, J. H.: Experimental results with a lithium drifted silicon diode radiation detector. Bull. Am. Phys. Soc.5, 501 (1960).
Emmer, T. L.: Low noise transistor amplifiers for solid state detectors. SSRD, S.140.
Engler, H. D.: Über den Einzelnachweis vonβ-Teilchen mit Germaniumund Silizium-Flächendioden. Z. Naturforsch.15a, 82 (1960).
—— Legierte Silizium-Dioden als Teilchenzähler. Nucleonik2, 215 (1960).
Evans, R. D.: The Atomic Nucleus. New York: McGraw-Hill Book Co. 1955.
Fairstein, E.: Nonblocking double-time linear pulse amplifier. Rev. Sci. Instr.27, 475 (1956).
-- Linear amplifier and preamplifier for alpha energy analysis circuit diagramm. ORNL Instrumentation and Controls Division, Drawing Q-2069 (1960).
-- Preamplifier configurations and noise. SNPD, S. 210.
-- Considerations in the design of pulse amplifiers for use with solid state radiation derectors. SSRD, S. 129.
Fano, U.: Ionization yield of radiation. II. The fluctuations of the number of ions. Phys. Rev.72, 26 (1947).
Flaschen, S. S., A. D. Pearson andJ. L. Kalnins: Improvement of semiconductor surface by low melting glasses, possibly functioning as ion getters. J. Appl. Phys.31, 431 (1960).
Fonger, W. H., J. J. Loferski andP. Rappaport: Radiation induced noise inp-n-junctions. J. Appl. Phys.29, 588 (1958).
Fox, R. J.: Procedure fordE/d x silicon surface-barrier diodes. SNPD, S. 270.
Friedland, S. S., J. W. Mayer, J. M. Denney andF. Keywell: Room temperature operatedp-n-junctions as charged particle detectors. Rev. Sci. Instr.31, 74 (1960).
—— —— andJ. S. Wiggins: Tiny semiconductor is fast, linear detector. Nucleonics18/2, 54 (1960).
-- -- -- The solid state ionization chamber. Hughes Aircraft Co., Culver City, Calif. Techn. Memo. 626 (1959).
-- -- -- The solid state ionization chamber. I.R.E. Trans. Nucl. Sci. NS-7 Nr. 2–3, 181 (1960).
Frosch, C. J., andL. Derick: Surface protection and selective masking during diffusion in silicon. J. Electrochem. Soc.104, 547 (1957).
—— —— Diffusion control by carrier gas composition. J. Electrochem. Soc.105, 695 (1958).
Fuller, C. S., andJ. A. Ditzenberger: Diffusion of donor and acceptor elements in silicon. J. Appl. Phys.27, 544 (1956).
Garlick, G. F. J.: Photoconductivity. Handbuch der Physik19, 316 (1956).
Gibson, W. M.: Oxide edge protection. SNPD, S. 232.
Gobeli, G. W.: Range-energy relation for low-energy alpha particles in Si, Ge, and InSb. Phys. Rev.103, 275 (1956).
Goodman, C.: Introduction to Pile Theory. Cambridge Mass. USA. Addison-Wesley Press Inc. 1952.
Gordon, G. E., G. W. Kilian, A. E. Larsh andT. Sikkeland: Siliconp-n-junctions as charged particle detectors. Livermore Rad. Lab., Univ. of California, Berkeley, Report9052 (1960).
Gorodetsky, A. F., V. G. Melnik, J. G. Melnik: A method for making an ohmic contact with silicon (russ.). Fizika Tverdogo Tela1, 173 (1959). Amerik. Übers. in: Soviet Phys.-Solid State1, 153 (1959).
Gossick, B. R.: On the transient behavior of semiconductor rectifiers. J. Appl. Phys.26, 1356 (1955).
—— On the transient behavior of semiconductor rectifiers. J. Appl. Phys.27, 905 (1956).
Goulding, F. S., andW. L. Hansen: Leakage current in semi-conductor junction radiation detectors and its influence on particle energy resolution. UCRL,9436 (1961).
Grainger, R. J., J. W. Mayer, J. S. Wiggins andS. S. Friedland: Further characteristics of the solid-state ionization chamber. Bull. Am. Phys. Soc.2, 265 (1960).
-- -- andJ. W. Oliver: Temperature behavior ofp-n-junction detectors. SSRD, S. 116.
Guggenbühl, W.: Messungen über das Rauschen von Flächendioden und Flächentransistoren im Gebiet des weißen Spektrums. Nachrichtentechn. Fachber.2, 97 (1955).
——, u.M. J. O. Strutt: Experimentelle Bestätigung der Schottkyschen Rauschformeln an neueren Halbleiter-Flächendioden im Bereich des weißen Rauschspektrums. A.E.Ü.9, 103 (1955).
Haeberli, W., P. Huber u.E. Baldinger: Absolutwerte der Arbeit pro Ionenpaar von Po-α-Teilchen in den Gasen He, N2, A, O2, CO2. Helv. Phys. Acta25, 467 (1952).
Halbert, M. L., andJ. L. Blankenship: Response of semiconductor surface-barrier counters to nitrogen ions and alpha particles. ORNL-LR-DWG März 1960.
—— —— andM. V. Goldman: Response of surface-barrier semiconductor counters to N14 ions. Bull. Am. Phys. Soc.5, 38 (1960).
Hansen, M., andK. Anderko: Constitution of Binary Alloys. New York: McGraw-Hill Book Co. 1958.
Hansen, W., andF. S. Goulding: Leakage, noise, guard rings and resolution in detectors. SNPD, S. 202.
Harten, H.-U., u.W. Schultz: Einfluß von Diffusionslänge und Oberflächenrekombination auf den Sperrschicht-Photoeffekt an Germanium. Z. Physik141, 319 (1955).
Heerden, P. J. van: The Crystal Counter. Amsterdam, V. V. Noord-Hollandsche Uitgevers Maatschappij 1945.
—— Photocurrent in cadmium sulfide. Phys. Rev.106, 468 (1957),
Henisch, H. K.: Rectifying Semi-Conductor Contacts. Oxford: Clarendon Press 1957.
Herlet, A., u.E. Spenke: Gleichrichter mitp-i-n bzw.p-s-n-Struktur unter Gleichstrombelastung. Z. angew. Physik 7, 99, 149, 195 (1955).
Hertz, C. H., andR. Gremmelmaier: Miniature semiconductor dose rate meter. Acta Radiologica54, 69 (1960).
Hofstadter, R.: Crystal counters. Nucleonics 4/4, 2 (1949) und 4/5, 39 (1949) und Proc. I.R.E.38, 726 (1950).
——J. C. D. Milton andS. L. Ridgeway: Behavior of silver chloride crystal counters. Phys. Rev.72, 977 (1947).
Jackson, R. W.: Semiconductor junction alpha detectors. Phys. in Canada15, 21 (1959).
--P. P. Webb andR. L. Williams: Improvements in encapsulated silicon junction alpha-detectors. SSRD, S. 29.
Jäntsch, O.: Sperrkennlinien mit Oberflächendurchbruch von Silizium-p spn-Gleichrichtern. Z. Naturforsch.15a, 302 (1960).
—— Das Sperrverhalten von Siliziumgleichrichtern in feuchten Gasen. Z. Naturforsch.15a, 141 (1960).
Jentschke, W.: Energien und Massen der Urankernbruchstücke bei Bestrahlung mit Neutronen. Z. Physik120, 165 (1943).
Joyner, W. T., H. W. Schmitt, J. H. Neiler andR. J. Silva: Energy spectra of correlated fragment pairs from the spontaneous fission of Cf252. SSRD, S. 54.
Karstensen, F.: Über die Diffusion in Germanium-Kristallen, die eine Korngrenze enthalten. Z. Naturforsch.4a, 1031 (1959).
Kingston, R. H., andS. F. Neustadter: Calculation of the space charge, electric field, and free carrier concentration at the surface of a semiconductor. J. Appl. Phys.26, 718 (1955).
Klingensmith, R. W.: The effect of a high radiation environment on goldsilicon charged particle detectors. SSRD, S. 112.
Koch, L.: La détection des rayonnements nucléaires par les semi-conducteurs. L'Onde Électrique404, 807 (1960).
——J. Messier etQ. Kerns: Mesure du coefficient de collection de charges dans des détecteurs de particules à jonctionp-n. Nouvelle methode de measure des durées de vie. J. Electronics and Control8, 289 (1960).
-- -- --: Nuclear method of measurement of diffusion length inp-n-junctions. SSRD, S. 83.
—— —— etJ. Valin: Description des jonctions NIP utilisées comme détecteurs de particules nucléaires. Spectrométrie des particules ionisantes de grande énergie. Détection des rayonsγ. Compt. rend.251, 2912 (1960) oder SNPD, S. 52.
-- -- -- N.I.P. Silicon junctions detectors. SSRD, S. 43.
Kohler, T. R.: Semiconductor X-ray detectors. SNPD, S. 193.
Landolt-Börnstein: Zahlenwerte und Funktionen. 6. Aufl. 1. Bd. 4. Tl. Berlin-Göttingen-Heidelberg: Springer-Verlag 1955.
Larabee, R. D.: High field effect in boron-doped silicon. Phys. Rev.116, 300 (1959).
Lint, V. A. J. van, H. Roth andE. G. Wikner: Energy lost per electron-hole pair created in Ge, Si, and Te. Bull. Am. Phys. Soc.4, 457 (1959).
Lintner, K., u.E. Schmid: Bedeutung von Korpuskularbestrahlung für die Eigenschaften von Festkörpern. Ergeb. Exakt. Naturw.38, 302 (1955).
Loman, G. T.: Pre-electrode semiconductor preparation. In “Transistor Technology” Vol. I, p. 303. Ed.H. E. Bridgers, J. H. Scaff andJ. N. Shive. Princeton: D. van Nostrand Co. 1958.
Love, T. A., andR. B. Murray: Fast-neutron detection and spectroscopy using a solid state detector. Bull. Am. Phys. Soc.5, 416 (1960).
-- -- Fast neutron spectroscopy with dual detectors. SNPD, S. 196.
-- -- The use of surface-barrier diodes for fast-neutron spectroscopy. SSRD, S. 91.
Madelung, O.: Der Leitungsmechanismus in homöopolaren Halbleitern. Ergeb. exakt. Naturw.27, 56 (1953).
——: Halbleiter. Handbuch der Physik20, 1 (1957).
Mann, H.: Diskuss. Bem. SNPD, S. 5.
-- Diskuss. Bem. SNPD, S. 41.
Mann, H. M., andW. W. Managan: Detection of minimum ionizing particles in siliconp-n-junctions. Rev. Sci. Instr.31, 908 (1960).
--J. W. Haslett andG. P. Lietz: Pulse rise time for charged particles inp-n-junctions. SSRD, S. 151.
Mayer, J. W.: Performance of germanium and silicon surface barrier diodes as alpha-particle spectrometers. J. Appl. Phys.30, 1937 (1959).
-- Diskuss. Bem. SNPD, S. 5.
-- The development of the junction detectors. I.R.E. Trans. Nucl. Sci. NS-7, Nr. 2–3, 178 (1960).
--N. A. Baily andH. L. Dunlap: Characteristics of ion-driftedp-i-n-junction particle detectors. Vortrag auf der Conference on Nuclear Electronics, Belgrad, 1961.
——, andH. L. Dunlap: Characteristics of ion-drifted junction detectors. Bull. Am. Phys. Soc.6, 107 (1961).
——, andB. R. Gossick: Use of Au-Ge surface barriers as alpha-particle spectrometers. Bull. Am. Phys. Soc.1, 322 (1956).
—— ——: Use of Au-Ge broad area barrier as alpha-particle spectrometer. Rev. Sci. Instr.27, 407 (1956).
——R. J. Grainger, J. W. Oliver, J. S. Wiggins andS. S. Friedland: Performance of large areap-n-junction particle spectrometers. Bull. Am. Phys. Soc.5, 355 (1960).
McDonald, B., andF. C. Collins: Anodic sectioning of diffused siliconp-n-junctions. Bull. Am. Phys. Soc.6, 106 (1961).
McKay, K. G.: Germanium counter. Phys. Rev.76, 1537 (1949).
—— Electron-hole production in germanium by alpha-particles. Phys. Rev.84, 829 (1951).
—— Then-p-n-junction as a model for secondary photoconductivity. Phys. Rev.84, 833 (1951).
——, andK. B. McAfee: Electron multiplication in silicon and germanium. Phys. Rev.91, 1079 (1953).
McKelvey, J. P., andR. L. Longini: Volume and surface recombination rates for injected carriers in germanium. J. Appl. Phys.25, 634 (1954).
McKenzie, J. M.: Diskuss. Bem. SNPD, S. 132.
—— Siliconp-n-junctions as particle spectrometers. Bull. Am. Phys. Soc.5, 355 (1960).
——, andD. A. Bromley: Gold-germanium junctions as particle spectrometers. Proc. IEE106 B, 731, 746 (1959).
—— —— Oberservation of charged particle reaction products. Phys. Rev. Letters2, 303 (1959).
—— —— Room temperature semiconductor particle spectrometer. Bull. Am. Phys. Soc.4, 422 (1959).
--, andG. T. Ewan: Semiconductor electron detectors. SSRD, S. 50.
--, andJ. B. S. Waugh: Silicon junctions as particle spectrometers. I.R.E. Trans. Nucl. Sci.NS-7, Nr. 2–3, 195 (1960).
Miller, G. L.: Diskuss. Bem. SNPD, S. 5.
-- Diffused junction detectors. SNPD, S. 19.
-- Diskuss. Bem. SNPD, S. 27.
Miller, L. E.: Uniformity of junctions in diffused silicon devices. In “Properties of Elemental and Compound Semiconductors”, Vol.5. Ed.H. C. Gates. New York: Interscience Publishers 1960.
Miller, G. L., W. L. Brown, P. F. Donovan andI. M. Mackintosh: Siliconp-n-junction radiation detectors. I.R.E. Trans. Nucl. Sci.NS-7, Nr. 2–3, 185 (1960).
--B. M. Foreman, L. C. L. Yuan, P. F. Donovan andW. M. Gibson: Application of solid state detectors to high energy physics. SSRD, S. 73.
Nordberg, E.: Gold-silicon surface barrier counters. Bull. Am. Phys. Soc.4, 457 (1957).
Orman, C., H. Y. Fan, G. F. Goldsmith andK. Lark-Horovitz: Germanium P-N-barriers as counters. Phys. Rev.78, 646 (1950).
-- M. S. Thesis, Purdue Univ. Physics Departm. 1951.
Oswald, F., u.R. Scharde: Über die Bestimmung der optischen Konstanten von Halbleitern des Typus AIII BV im Infraroten. Z. Naturforsch.9a, 611 (1954).
Pantchechnikoff, J. I.: Large area germanium photocell. Rev. Sci. Instr.23, 135 (1952).
Patalong, H.: Über Legierungsverfahren zur Herstellung von Silizium-Gleichrichtern. Diss. Aachen 1956 (unveröffentlicht).
Patskevich, V. M., V. S. Vavilov andL. S. Smirnov: Energy of ionization by electrons in silicon crystals (russ.). Zhur. Eksptl. i. Teoret. Fiz.33, 804 (1957). Amerik. Übers. in Sowj. Phys. JETP6, 619 (1958).
Patter, D. M. van, andW. Whaling: Nuclear disintegration energies. Rev. Mod. Phys.26, 402 (1954) und29, 757 (1957).
Peet, C. S.: Diskuss. Bem. SNPD, S. 168.
Pell, E. M.: Ion drift in ann-p-junction. J. Appl. Phys.31, 291 (1960).
-- The ion-drift process. SNPD, S. 136.
Pfister, H.: Bestimmung von Diffusionslängen und des mittleren Energiebedarfs zur Bildung eines Elektron-Loch-Paares durch Röntgenbestrahlung vonp-n-Sperrschichten (unveröffentlicht).
Phelps, C. G.: Silicon wafers ford E/d x detectors. SNPD, S. 273.
Prior, A. C.: The Field-dependence of carrier mobility in silicon and germanium. J. Phys. Chem. Solids12, 175 (1959).
Putten, J. D. van, andJ. C. Van der Velde: Solid-state detector for penetrating and minimum ionizing particles. Bull. Am. Phys.5, 197 (1960).
Rappaport, P.: The electron-voltaic effect inp-n-junctions induced by betaparticle bombardment. Phys. Rev.93, 246 (1954).
——,J. J. Loferski andE. G. Linder: The electron-voltaic effect in germanium and siliconp-n-junction. RCA Rev.17, 100 (1956).
Rath, H. L.: Welche Möglichkeiten bieten Scheinwiderstandsmessungen an Sperrschichten? Nachrichtentechn. Fachber.5, 15 (1956).
Raymo, C. T., J. W. Mayer, J. S. Wiggins, andS. S. Friedland: Performance ofp-n-junction particle detectors under gamma irradiation. Bull. Am. Phys. Soc.5, 354 (1960).
-- -- Transient response ofp-n-junction detectors. SSRD, S.157.
Rediker, R. H.: GaAs diodes: Their fabrication and application. SNPD, S. 164.
Riehl, N., u.R. Sizmann: Verändrung der Materie durch Bestrahlung. In „Kerntechnik“, herausgegeben vonW. Riezler u.W. Walcher, Stuttgart: B. G. Teubner 1958.
Robbins, H., andB. Schwartz: Chemical etching of silicon. I. The system HF, HNO3, and H2O. J. Electrochem. Soc.106, 505 (1959).
Rossi, B.: High Energy Particles. New York: Prentice Hall, Inc. 1952.
Ryder, E. J.: Mobility of holes and electrons in high electric fields. Phys. Rev.90, 766 (1953).
—— andW. Schockley: Mobilities of electrons in high electric fields. Phys. Rev.81, 139 (1951).
Ryvkin, S. M., A. P. Bogomasov, B. M. Konovalenko, O. A. Matveev: Semiconductor device for γ-rays indication (russ.). Zhur. Tekh. Fiz.27, 1601 (1957).
Sah, C. T., R. N. Noyce andW. Shockley: Carrier generation and recombination inp-n-junction characteristics. Proc. I.R.E.45, 1228 (1957).
Salzberg, B., andK. Siegel: Semiconductorp-n-junction radiation counters. Proc. I.R.E.46, 1536 (1958).
Scanlon, W. W.: Properties of heavy atom semiconductors. SNPD, S.145.
Schmitt, H. W., u.J. H. Neiler: Diskuss. Bem. SNPD, S.27.
Schweinler, H. C.: Energy loss of moving charged particles in a valence or ionic crystal. SNPD, S.91.
Segrè, E., andC. Wiegand: Stopping power of various substances for fission fragments. Phys. Rev.70, 808 (1946).
Seitz, F.: Radiation effects in solids. Phys. Today5/6, 6 (1951).
——, andJ. S. Koehler: Diplacement of atoms during irradiation. Solid State Physics. Ed.F. Seitz, andD. Turnbull, Vol.2, p. 305. New York: Academic Press Inc. 1956.
Shive, J. N.: The properties of germanium-phototransistors. J. Opt. Soc. Am.43, 239 (1953).
—— The Properties, Physics and Design of Semiconductor Devices, p. 350. Princeton: D. van Nostrand Co. 1959.
—— Contacts and electrodes. In: “Transistor Technology”, Vol. I, p. 323. Ed.H. E. Bridgers, J. H. Scaff andJ. N. Shive. Princeton: D. van Nostrand Co. 1958.
Shockley, W.: On the surface states associated with a potential. Phys. Rev.56, 317 (1939).
—— The theory ofp-n-junctions in semiconductors andp-n-junction transistors. Bell. System Tech. J.28, 435 (1949).
—— Electrons and holes in semiconductors. New York: D. van Nostrand Co. 1950.
—— Problems related top-n-junctions in silicon. Czech. J. Phys.B 11, 81 (1961) oder Solid-State Electronics2, 35 (1961).
Siegbahn, K.: Beta- and Gamma-Ray Spectroscopy. Amsterdam: North Holland Publishing Co. 1955.
Silverman, S. J., andD. R. Benn: Junction delineation in silicon by gold chemiplating. J. Electrochem. Soc.105, 170 (1958).
Smits, F. M.: Measurements of sheet resistivities with the four-point probe. Bell. System Tech. J.37, 714 (1958).
—— Formation of junction structures by solid state diffusion. Proc. I.R.E.46, 1049 (1958).
—— Diffusion in homöopolaren Halbleitern. Ergeb. exakt. Naturw.31, 167 (1959).
Spenke, E.: Elektronische Halbleiter. Berlin-Göttingen-Heidelberg: Springer-Verlag 1956.
Statz, H.: Semiconductor surface effects. SNPD, S.99.
——G. A. DeMars, L. Davis jr. andA. Adams jr.: Surface states on silicon and germanium surfaces. Phys. Rev.101, 1272 (1956);106, 455 (1957).
Stebler, A., u.P. Huber: Eintrittsresonanzen schneller Neutronen an N14 und S32. Helv. Phys. Acta21, 59 (1948).
Steinberg, R.: Semiconductor fission probe. Nucleonics18/2, 85 (1960).
Strutt, M. J. O.: Rauschursachen und Rauschspektren in Elektronenröhren, Halbleiterdioden und Transistoren. Nachrichtentechn. Fachber.2, 49 (1955).
Sullivan, M. V., andJ. H. Eigler: Electroless nickel plating for making ohmic contacts to silicon. J. Elektrochem. Soc.104, 226 (1957).
Tannenbaum, E.: Detailed analysis of thin phosphorus-diffused layers inp-type silicon. Solid-State Electronics2, 123 (1961).
Turner, D. R.: Electroplating metal contacts on germanium and silicon. J. Electrochem. Soc.106, 786 (1959).
Valdes, L. B.: Resistivity measurements on germanium for transistors. Proc. I.R.E.42, 420 (1954).
Vavilov, V. S., L. S. Smirnov andV. M. Patskevich: Energy of ionization by electrons in germanium crystals (russ.). Doklady Akad. Nauk S.S.S.R.112, 1020 (1957). Amerik. Übers. in Soviet Phys. Doklady2, 93 (1957).
Victoreen, J. A.: The calculation of X-ray mass absorption coefficients. J. Appl. Phys.20, 1141 (1949).
Walter, F. J.: Diskuss. Bem. SNPD, S. 6.
——J. W. T. Dabbs andL. D. Roberts: Fission fragment counting with germaniumn-p-junction counters. Bull. Am. Phys. Soc.3, 181 (1958).
—— —— —— Behavior of semiconductor counters. Bull. Am. Phys. Soc.5, 38 (1960).
-- -- -- Semiconductor particle counters at low temperatures. SSRD, S. 79.
—— —— —— Large area germanium surface-barrier counters. Rev. Sci. Instr.31, 756 (1960).
—— —— —— andH. W. Wright: Broad-area germanium surface barrier counters. ORNL Report2718, 53 (1959).
-- -- -- -- A study of germanium surface-barrier counters. ORNL Report58-11-99 (1959).
——L. D. Roberts andJ. W. T. Dabbs: Low-temperature characteristics of germaniump-n-junction counters. Bull. Am. Phys. Soc.3, 304 (1958).
Waltz, M. C.: Gold-bonded contacts. In „Transistor Technology”, Vol. I., p. 375. Ed.H. E. Bridgers, J. H. Scaff andJ. N. Shive. Princeton: D. van Nostrand Co. 1958.
Webb, P. P., R. L. Williams andR. W. Jackson: An encapsulated silicon junction alpha-particle detector. I.R.E. Trans. Nucl. Sci.NS-7, Nr. 2–3, 199 (1960).
Wegner, H. E.:d E/d x-E semiconducter detector systems. SNPD, S. 74.
-- Diskuss. Bem. SNPD, S. 7 und 8.
--d E/d x andE semiconductor detector systems for 25 MeV-He3 and alpha particles. SSRD, S. 103.
Welker, H.: Über neue halbleitende Verbindungen. Z. Naturforsch.7a, 744 (1952);8a, 248 (1953).
—— Semiconducting intermetallic compounds. Physica20, 893 (1954).
Wertheim, G. K.: Radiation-induced defects in silicon. SNPD, S. 128.
Whaling, W.: The energy loss of charged particles in matter. Handbuch der Physik34, 193 (1958).
White, F. A.: Semiconductor electron multiplier. SNPD, S. 177.
Wiesner, R.: Derp-n-Photoeffekt. Halbleiterprobleme Bd. III. Braunschweig: Vieweg u. Sohn 1956.
Williams, R. L.: New semiconductor nuclear particle detector. Bull. Am. Phys. Soc.5, 354 (1960).
-- Encapsulated detectors. SNPD, S. 28.
-- Diskuss. Bem. SNPD, S. 132.
--, andP. P. Webb: Transistor form of nuclear particle detector. SNPD, S. 182 und SSRD, S. 35.
Wooldridge, D. E., A. J. Ahearm andJ. A. Burton: Conductivity pulses induced in diamond by alpha-particles. Phys. Rev.71, 913 (1947).
Yavin, A. J.: Detection of alpha particles with commercially available transistors. Rev. Sci. Instr.31, 351 (1960).
Zener, C.: A theory of the electrical breakdown of solid dielectrics. Proc. Roy. Soc. (London)145, 523 (1934).
Ziel, A. van der: Fluctuation phenomena in semi-conductors. London: Butterworths Scientific Publications 1959.
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Czulius, W., Dietrich Engler, H., Kuckuck, H. (1962). Halbleiter-Sperrschichtzähler. In: Ergebnisse der Exakten Naturwissenschaften. Ergebnisse der Exakten Naturwissenschaften, vol 34. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0111116
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