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Diffusion in Metallen und Halbeitern

  • Alfred Seeger
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 8)

Abstract

Diffusion in Metals and Semi-Conductors

The standard interpretation of diffusion data in terms of a single defect mechanism is reviewed. Possible causes of deviations from this standard theory are discussed. In close-packed metals the temperature dependence of the activation energies is small. For Ni, Pt, Ag, and Al it has been shown that the principal deviation is due to a contribution of divacancies to the self-diffusion in addition to that of monovacancies.

In the diamond structure the temperature dependence of the activation energies may be significant. A detailed discussion of the experimental results indicates thhat in silicon a change-over from a low-temperature vacancy mechanism to a high-temperature interstitial mechanism may occur, whereas in germanium a vacancy mechanism is likely to predominate over the entire temperature range.

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Copyright information

© Friedr. Vieweg & Sohn GmbH, Verlag 1968

Authors and Affiliations

  • Alfred Seeger
    • 1
    • 2
  1. 1.Institut für Physik am Max-Planck-Institut für MetallforschungStuttgart
  2. 2.Institut für theoretische und angewandte Physik der Universität Stuttgart (T. H.)Stuttgart

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