Diffusion in Metallen und Halbeitern
Diffusion in Metals and Semi-Conductors
The standard interpretation of diffusion data in terms of a single defect mechanism is reviewed. Possible causes of deviations from this standard theory are discussed. In close-packed metals the temperature dependence of the activation energies is small. For Ni, Pt, Ag, and Al it has been shown that the principal deviation is due to a contribution of divacancies to the self-diffusion in addition to that of monovacancies.
In the diamond structure the temperature dependence of the activation energies may be significant. A detailed discussion of the experimental results indicates thhat in silicon a change-over from a low-temperature vacancy mechanism to a high-temperature interstitial mechanism may occur, whereas in germanium a vacancy mechanism is likely to predominate over the entire temperature range.
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