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Strahlenschäden in Halbleitern und Halbleiterbauelementen

  • Rudolf Bäuerlein
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Part of the Advances in Solid State Physics book series (ASSP, volume 8)

Abstract

A review is given of the current status of radiation damage in semiconducting materials and components. Problems related to the mechanism of production of defects by bomdardment with energetic particles, especially the displacement energy are discussed in detail. The paper deals with the micro-structure of radiation defects in silicon, which is known from electron spin resonance and optical absorption experiments. Vacancies which are created as primary defects move below room-temperature and combine with impurity and doping atoms, and form thereby a new kind of defect centres. In semiconductors primary and secondary defects are electrically active. Therefore many properties of material are changed by irradiation.

In semiconducting components with PN-junctions radiation defects mainly form recombination centres, and this leads to a decrease of lifetime and diffusion length of minority carriers. In planar and MOS field effect transistors damage also is caused by ionisation which creates a positive space charge in the silicon oxid layer and interface states between the silicon surface and the silicon oxid layer. Radiation defects anneal at elevate temperatures. The phenomena of recovery of irradiated semiconducting materials are various because new defect complexes are formed during the annealing process.

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