Abstract
A review is given of the current status of radiation damage in semiconducting materials and components. Problems related to the mechanism of production of defects by bomdardment with energetic particles, especially the displacement energy are discussed in detail. The paper deals with the micro-structure of radiation defects in silicon, which is known from electron spin resonance and optical absorption experiments. Vacancies which are created as primary defects move below room-temperature and combine with impurity and doping atoms, and form thereby a new kind of defect centres. In semiconductors primary and secondary defects are electrically active. Therefore many properties of material are changed by irradiation.
In semiconducting components with PN-junctions radiation defects mainly form recombination centres, and this leads to a decrease of lifetime and diffusion length of minority carriers. In planar and MOS field effect transistors damage also is caused by ionisation which creates a positive space charge in the silicon oxid layer and interface states between the silicon surface and the silicon oxid layer. Radiation defects anneal at elevate temperatures. The phenomena of recovery of irradiated semiconducting materials are various because new defect complexes are formed during the annealing process.
Forschungslaboratorium Erlangen der Siemens AG
Preview
Unable to display preview. Download preview PDF.
Literatur
Seitz, F. and Koehler, J. S., Displacement of atoms during irradiation, Solid State Phys., 2, (1956), 307.
Leibfried, G., Bestrahlungseffekte in Festkörpern, B.G. Teubner Verlagsgesellschaft, Stuttgart 1965.
Corbett, J.W., Electron Radiation Damage in Semiconductors and Metals Solid State Phys. Suppl. 7 (1966).
Loferski, J.J. and Rappaport, P.P., Phys. Rev. 98, (1955), ibid. Phys. Rev. 98 111, (1958), 432, J. Appl. Phys. 30, (1959) 1296.
Brown, W.L., Augustyniak, W. M., J. Appl. Phys. 30, (1959), 1300.
Flicker, H., Loferski, J.J., Scott-Monck, J., Phys. Rev. 128, (1962), 2557.
Bäuerlein, R., in „Radiation Damage in Solids” (D.S. Billington, ed.), S. 358. Academic Press, New York, 1963, Z. Physik, 176, (1963), 498, Z. Naturforsch. 14a, (1959), 1069, Physik. Verhandl. 14, (1963), 167.
Kulp, B.A., and Kelley, R.H., J. Appl. Phys. 31 (1960), 1057.
Kulp, B.A., Phys. Rev., 125, (1962), 1865.
Kulp, B.A. and Detweiler, R.M., Phys. Rev. 129, (1963), 2422.
Detweiler, R.M. and Kulp, B.A., Bull. Amer. Phys. Soc. 10, (1965), 321 (A) und private Mitteilung
Bryant, F.J. and Webster, E., Phys. stat. sol. 21, (1967), 315.
Flicker, H., Loferski, J.J., Elleman, T.S., IEEE Trans. ED-11, (1964), 2.
Grimshaw, J.A., Banbury, P.C., Proc. Phys. Soc. 84, (1964), 151.
Eisen, F.H., Bull. Am. Phys. Soc. 9, (1964), 290, Phys. Rev. 135, (1964), A1394.
Pauling, L., J. Phys. Chem. 58, (1954), 662.
Honig, R.E., J. Chem. Phys. 22, (1954), 126 und 22, (1954), 1610.
Shenstone, A.G., Phys. Rev. 72, (1947), 411.
Shenstone, A.G., Zitiert in C.E. Moose “Atomic Energy Levels”, Vol. III, Circular Natl. Bur. Standards 467 (1958) Nachtrag zu Vol. I.
Andrew, K.L. and Meissner, K.W., J. Opt. Soc. Am. 47, (1957), 850.
Moore, C.E., “Atomic Energy Levels” Vol. III, Circular Natl. Bur. Standards 467 (1958).
Eggen, D.T., Zitiert bei G. R. Henning and J.H. Hove, Proc. Conf. Peaceful Uses of Atomic Energy, Vol. 7, Genf, (1956), S. 666.
Watkins, G.D., in “Radiation Damage in Semiconductors”, S. 97, Academic Press, New York, (1965), Symposium “Radiation effects in semiconducting components” Toulouse, März 1967, J. Phys. Soc. Japan 18, Suppl. II, 22 (1963).
Watkins, G.D., Corbett, J.W. and Walker, R.M., J. Appl. Phys. 30, (1959), 1198.
Watkins, G.D. and Corbett, J.W., Discussions Faraday Soc. 31, (1961), 86, Phys. Rev. 121, (1961), 1001, Phys. Rev. 138, (1965), A 543, Phys. Rev. 121, (1961), 1001, Phys. Rev. 134, (1964), A1359.
Corbett, J.W. and Watkins, G.D., Phys. Rev. Letters 7, (1961), 314, Phys. Rev. 138, (1965), A 555.
Bemski, G., Szymanski, B. and Wright, K., J. Phys. Chem. Solids 24, (1963), 1.
Corbett, J.W., Watkins, G.D., Chrenko, R.M. and McDonald, R.S., Phys. Rev., 121, (1961), 1015.
Bemski, G., J. Appl. Phys. 30, (1959), 1195.
Cheng, L.J., Corelli, J.C., Corbett, J.W. and Watkins, G.D., Phys. Rev. 152, (1966), 761.
Lütgemeier, H. and Schnitzke, K., Phys. Lett. 25A, (1967), 232, Phys. Lett. 25A, (1967), 726.
Nisenoff, M. and Fan, H.Y., Jung, W. and Newell, G.S., Phys. Rev. 128, (1962), 1605, Phys. Rev. 132, (1963), 648.
Almeleh, N. and Goldstein, B., Phys. Rev. 149, (1966), 687.
Hill, D.E., Phys. Rev. 114, (1959), 1414.
Baldwin, J.A., Jr., J. Appl. Phys. 36, (1965), 793, J. Appl. Phys. 36, (1965), 2079.
Trueblood, D.L., Phys. Rev. 161, (1967), 828.
Kimmel, H., Z. Naturf. 21a, (1966), 526.
Wohlleben, K. und Beck, W. Zeitsch. Naturf. 21a, (1966), 1057.
Aukermann, L.W. and Graft, R.D., Phys. Rev. 127, (1962), 1576.
Vitovskii, N.A., Mashovets, T.V., Ryvkin, S.M. and Khansevasov, R.Yu., Fiz. Tverd. Tela 5, (1963), 3510.
Aukermann, L.W., Davis, P.W., Graft, R.D. and Shilliday, T.S., J. Appl. Phys. 34, (1963), 3590.
Krivoo, M.A., Malisova, E.V. and Malyanov, V., Izvest. Vyssh. Ueheb. zav. Fizika 2, (1963) 114.
Vavilov, V.S., “Strahlungsdefekte in Halbleitern”, Phys. Stat. Sol. 11, (1965), 447, Usp. Fiz. Nauk. 84, (1964), 431.
Vavilov, V.S., Vintovkin, S.I., Lyutovich, A.S., Plotnikov, A.F. und Sokolova, A.A. Fiz. Tverd. Tela 7, (1965) 399.
Tkachev, V.D., Plotnikov, A.F. and Vavilov, V.S., Fiz. Tverd. Tela 5, (1964), 3188.
Tkachev, V.D., Plotnikov, A.F., Vavilov, V.S., Fiz. Tverd, Tela 5, (1964). 1332.
Curtis, O.L., Jr. and Crowford, J.H., Jr., Phys. Rev. 124, (1961), 1731, Discussions Faraday Soc. 31, (1961), 107, Phys. Rev. 126, (1962), 1342
Akimchenko, I.P., Vavilov, V.S., Plotoikov, A.F., Fiz. Tverd. Tela 5, (1963), 1417, Fiz. Tverd. Tela 35, (1964), 1718.
Mashovets, T.V., Khansevarov, R.Yu., Fiz. Tverd. Tela 7, (1965), 245.
Paul, B., Wohlleben, K., Physik. Verhandl. 16, (1965), 40.
Carter, J.R., J. Phys. Chem. Solids 27, (1966), 913.
Wertheim, G.K., Bemski, G., Phys. Rev. 105, (1957) 1730, 110 (1958), 1272, J. Appl. Phys. 30, (1959), 1166.
Galkin, G.N., Rytova, N.S., Vavilov, V.S., Fiz. Tverd. Tela 2, (1960), 2025.
Baiker, J.A., Phys. Rev. 129, (1963), 1174.
Nakano, T., Inuishi, Y., J. Phys. Soc. Japan 19, (1964), 851.
Glaenzer, R.H., Wolf, C.J., J. Appl. Phys. 36, (1965), 2197.
Bäuerlein, R., Wohlleben, K., Raumfahrtforschung 12, (1968), 16.
Downing, R.G., NASA-CR-59669.
Statler, R.L., NRL 6091 (1965), NRL 6333 (1965).
Baicker, J.A., Faughnan, B.W., J. Appl. Phys. 33, (1962), 11.
Rosenzweig, W., Bell System Tech. J. 41, (1962), 1573.
Grimshaw, J.A., Phys. Letters 22, (1966), 372.
Flicker, H., Patterson, W.R., J. Appl. Phys. 37, (1966), 13.
Mandelkorn, J., Lanneck, J.H., Ulman, R.F., Proc. of 5th Photovoltaic Specialists Conference (1965).
Denney, J.M., Downing, R.G., NASA-CR-55829.
Rosenzweig, W., Smits, F.M., Brown, W.L., J. Appl. Phys. 35, (1964), 2707.
Wysocki, J.J., IEEE Trans. NS-13, (1966), 168, IEEE Trans. NS-14, (1967), 103.
Bäuerlein, R., Krüger, W., Uhl, D., “Untersuchungen über die Veränderung der elektrischen Kenndaten von Silizium-NPN-Transistoren durch Bestrahlung mit Elektronen und Protonen”, BMwF-FBW 67-31 (1967).
Brown, R.R., IEEE Trans. NS-10, (1963), 54 und Symposium on Radiation Effects in Semiconducting Components, Toulouse, 7.-10.3.1967. Horne, W.E., Brown, R.R., IEEE Trans. NS-13, (1966), 181.
Brucker, G.J., Denneby, W., Holmes-Siedle, A. IEEE Trans. NS-12, (1965), 69, NS-13, (1966), 188. Brucker, G.J., Sumposium on Radiation Effects in Semiconducting Components Toulouse 7.-10.3.1967.
Gordon, F., Wannemacher, H.E., IEEE Trans. NS-13, (1966), 262.
Hughes, H.L., IEEE Trans. NS-12, (1965), 6, 53
Kooi, E., Philips Res. Rep. 20, (1965), 565, 20, (1965), 306.
Mattauch, R.J., Lade, R.W., Proc. IEEE 53, (1965), 1748, IEEE Trans. NS-14, (1967), 4, 54.
Speth, A.J., Fang, F.F., Appl. Phys. Lett 7, (1965), 145.
Szedon, J.R., Sandor, J.E., Appl. Phys. Lett. 6, (1965), 181.
Stanley, A.G., Proc. IEEE 53, (1965), 627.
Gray, P.V., Brown, D.M., Appl. Phys. Lett. 8, (1966), 31.
Grove, A.S., Snow, E.H., Proc. IEEE 54, (1966), 894.
Collins, D.R., Sah, C.T., Appl. Phys. Lett 8, (1966), 124.
Edagawa, H., Morita, Y., Maekawa, S., Inuishi, Y., Japan J. Appl. Phys. 5, (1966), 256.
Newmann, P.H., Wannemacher, H., Proc. IEEE 55, (1967), 562.
Zaininger, K.H., Appl. Phys. Lett. 8, (1966), 140.
Revesz, A.G., Zaininger, K.H., Evans, R.J., J. Phys. Chem. Solids 28, (1967), 197.
Deal, B.E., Snow, E.H., Grove, A.S., SCP and SST 9, (1966), 25.
Zaininger, K.H., Holmes-Siedle, A.G., RCA Rev. 28, (1967), 208.
Hirata, M., Saito, H., Crawford, J.J., J. Appl. Phys. 38, (1967), 2433.
Tanaka, T., Inuishi, Y., J. Phys. Soc. Japan 19, (1964), 167.
Corbett, J.W., Watkins, G.D., McDonald, R.S., Phys. Rev. 135, (1964), A 1381.
Cheng, L.J., Corelli, J.C., Corbett, J.W., Watkins, G.D., Phys. Rev. 152, (1966), 761.
Carter, J.R., IEEE Trans NS-13, (1966), 24.
Fang, P.H., Liu, Y.M., Phys. Lett. 20, (1966), 344.
Tauke, R.V., Faraday, B.J., Statler, R.L., Phys. Lett 24A, (1967), 143.
MacKay, J.W., Klontz, E.E., J. Appl. Phys. 30, (1959), 1269. Klontz, E.E., MacKay, J.W., in “Radiation Damage in Solids” (International Atomic Energy Agency, Wien, 1963), Band III, S. 27, in “Radiation Damage in Semiconductors” S. 11, Academic Press New York 1965, J. Phys. Soc. Japan 18 (1963), Suppl. III, 216. Callcott, T.A., MacKay, J.W., in “Radiation Damage in Semiconductors” S. 27, Academic Press, New Yord (1965), Phys. Rev. 161, (1967), 698.
Singh, M.P. zitiert bei MacKay, J.W., et al.in “Radiation Damage in Semiconductors” S. 11, Academic Press, New York (1965).
Bäuerlein, R., unveröffentlichte Arbeit
Editor information
Rights and permissions
Copyright information
© 1968 Friedr. Vieweg & Sohn GmbH, Verlag
About this chapter
Cite this chapter
Bäuerlein, R. (1968). Strahlenschäden in Halbleitern und Halbleiterbauelementen. In: Madelung, O. (eds) Festkörper Probleme 8. Advances in Solid State Physics, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0109167
Download citation
DOI: https://doi.org/10.1007/BFb0109167
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-75323-0
Online ISBN: 978-3-540-75324-7
eBook Packages: Springer Book Archive