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Über die Physik des Lawinendurchbruches in Halbleitern

  • Teil I. Referate des Fachausschusses ‚’Halbleiter”
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Festkörperprobleme 9

Part of the book series: Advances in Solid State Physics ((ASSP,volume 9))

Abstract

The physical mechanisms for avalanche breakdown in semiconductor p-n junctions are well understood. Especially there is no difference between breakdown in microplasmas and uniform junctions. The ionization coefficients α(F) are measured for all semiconductors of technical interest. The experimental determined dependence of α on the electrical field strength F is well described by a theory of Baraff. This good agreement between theory and experimental data is achieved by setting the ionization energy equal to 3/2 of the band gap energy and a suitable choice of the mean free path for emission of optical phonons. Information on the distribution function of the electrons in the electron-hole plasma can be directly obtained from the spectral distribution of the light and also from the energy distribution of electrons both emitted by the junctions during breakdown. The broad light emission band is interpreted as Bremsstrahlung of hot carries in the field of ionized centers. Experimental data on electron emission are only available from p−n+ junctions in Si. Up to now it was not possible to get detailed information on the distribution function from these measurements. It seems desireable to continue these investigations by lowering the electron affinity of the electron emitting surface. The mean free paths of the hot electrons for emission of optical phonons as determined from the electron emission data, the analysis of light emission, the fit of the experimentally determined ionization coefficients to the Baraff theory, and the saturated drift velocity in high electric fields only agree, within a factor of two.

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  1. 2. Physikalisches Institut der RWTH Aachen, Aachen, Deutschland

    W. Mönch

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O. Madelung

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© 1969 Friedr. Vieweg + Sohn GmbH, Verlag

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Mönch, W. (1969). Über die Physik des Lawinendurchbruches in Halbleitern. In: Madelung, O. (eds) Festkörperprobleme 9. Advances in Solid State Physics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0109155

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  • DOI: https://doi.org/10.1007/BFb0109155

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