Skip to main content
SpringerLink
Log in

Steuerbare Siliciumgleichrichter

  • Chapter
  • First Online:
Festkörperprobleme 2

Part of the book series: Advances in Solid State Physics ((ASSP,volume 2))

  • 44 Accesses

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Literatur

  1. J. L. Moll, M. Tannenbaum, J. M. Goldey und N. Holonyak, pnpn transistor switches, Proc. IRE 44, 9, 1174–1182 (1956).

    Article  Google Scholar 

  2. W. T. Read jr., A proposed high-frequency, negative resistance diode. Bell Syst. Tech. J. 37, 401–446 (1958).

    Google Scholar 

  3. K. G. McKay, Avalanche breakdown in silicon. Phys. Rev. 94, 877–884 (1954).

    Article  ADS  Google Scholar 

  4. N. H. Fletcher, Some aspects of the design of power transistors. Proc. IRE 43, 551–559 (1955).

    Article  Google Scholar 

  5. W. Schultz, Vortrag Physikertagung 1960, Wiesbaden.

    Google Scholar 

  6. C. T. Sah, R. N. Noyce, W. Shockley, Carrier generation and recombination in pn-junctions and pn-junction characteristics. Proc. IRE 45, 1228–1243 (1957).

    Article  Google Scholar 

  7. R. W. Aldrich, H. Holonyak jr., Multiterminal pnpn-switches. Proc. IRE 46, 1236–1239 (1958).

    Article  Google Scholar 

  8. J. A. Lesk, Germanium pnpn-Switches. IRE Transact. Electr. Dev. ED-6, 28–35 (1959).

    Article  ADS  Google Scholar 

  9. J. A. Hoerni, R. N. Noyce, pnpn-switches. Wescon Conv. Rec. 2, 3, 172–175 (1958).

    Google Scholar 

  10. J. M. Mackintosh, The electrical characteristics of silicon pnpn-triodes. Proc. IRE 46, 1229–1235 (1958).

    Article  Google Scholar 

  11. W. Shockley, W. T. Read jr., Statistics of the recombinations of holes and electrons. Phys. Rev. 87, 835–842 (1952).

    Article  MATH  ADS  Google Scholar 

  12. J. M. Early, Effects of space-charge layer widening in junction transistors. Proc. IRE 50, 1401–1406 (1952).

    Article  Google Scholar 

  13. H. S. Veloric, M. B. Prince, M. J. Eder, Avalanche breakdown in silicon diffused pn-junctions as a function of impurity gradient. J. Appl. Phys. 27, 895–899 (1956).

    Article  ADS  Google Scholar 

  14. R. M. Scarlett, Space-charge layer width in diffused junctions. IRE Transact. Electr. Dev. ED-6, 405–409 (1959).

    Article  ADS  Google Scholar 

  15. R. W. Aldrich, N. Holonyak jr., Two-terminal asymmetrical and symmetrical silicion negative resistance switches. J. Appl. Phys. 30, 1819–1824 (1959).

    Article  ADS  Google Scholar 

  16. R. A. van Ligten, D. Navon, Base turn-off of pnpn-switches, IRE Wescon Conv. Rec. Electr. Dev. 4, 49–22 (1960).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. AEG-Forschungsinstitut Frankfurt a.M., Frankfurt a.M., Deutschland

    W. Gerlach & G. Köhl

Authors
  1. W. Gerlach
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. Köhl
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Fritz Sauter

Rights and permissions

Reprints and permissions

Copyright information

© 1963 Friedr. Vieweg & Sohn

About this chapter

Cite this chapter

Gerlach, W., Köhl, G. (1963). Steuerbare Siliciumgleichrichter. In: Sauter, F. (eds) Festkörperprobleme 2. Advances in Solid State Physics, vol 2. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108992

Download citation

  • DOI: https://doi.org/10.1007/BFb0108992

  • Published:

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-75311-7

  • Online ISBN: 978-3-540-75312-4

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation