Abstract
The optical and structural properties of anodically oxidized porous silicon and of siloxene (Si6O3H6) are discussed. Both materials exhibit a strong visible luminescence at room temperature. In siloxene, the luminescence can be traced to six-fold silicon rings which act as efficient radiative recombination centers. In the case of porous silicon, on the other hand, spatial confinement of charge carriers in quantum wires has been proposed as the origin of the luminescence. Based on the similarities between the optical and structural properties observed for certain siloxene derivates and for porous silicon, it is argued that the luminescence in porous silicon actually stems from siloxene derivates formed during the etching process.
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References
L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).
A. Uhlir, Bell System Tech. J. 35, 333 (1956).
C. Pickering, M.I.J. Beale, D.J. Robbins, P.J. Pearson, and R. Greef, J. Phys. C 17, 6535 (1984).
L.E. Brus, J. Chem. Phys. 80, 4403 (1984).
A.G. Cullis and L.T. Canham, Nature 353, 335 (1991).
R.A. Street, Adv. Phys. 25, 397 (1976).
I. Hirabayashi, K. Morigaki, S. Yamanaka, J. Phys. Soc. Jap. 52, 671 (1983); J. Non-Cryst. Solids 59&60, 641 (1983).
I.H. Campball, P.M. Fauchet, Solid State Commun. 58, 739 (1986) and refs. therein.
S.R. Goodes, T.E. Jenkins, M.I.J. Beale, J.D. Benjamani, and C. Pickering, Semicond. Sci. Technol. 3, 483 (1988).
R. Tsu, H. Shen, M. Dutta, Appl. Phys. Lett. 60, 112 (1992).
H.D. Fuchs, M. Sutzmann, M.S. Brandt, M. Rosenbauer, and M. Cardona, to be published.
M.S. Brandt, H.D. Fuchs, M. Stutzmann, J. Weber, and M. Cardona, Solid State Commun. 81, 307 (1992), H.D. Fuchs, M.S. Brandt, M. Stutzmann, and J. Weber, MRS Symposium Proceedings 256 (1992), in print.
B.C. Cavenett, Adv. Phys. 30, 475 (1981).
E. Hengge, in Silicon Chemistry II (Springer, Berlin, 1974), p. 92ff.
F. Wöhler, Lieb. Ann. 127, 257 (1863).
H. Kautsky and G. Herzberg, Z. Anorg. Chem. 139, 135 (1924).
J.F. Morcer and M. Wittner, Phys. Rev. B 37, 2618 (1988).
A. Weiss, G. Beil, and H. Meyer, Z. Naturforsch. 34b, 25 (1979).
E. Hengge, Chem. Ber. 95, 648 (1962).
E. Hengge and K. Pretzer, Chem. Ber. 96, 470 (1963).
H. Kautsky, Z. Naturforsch. 76, 174 (1972).
G. Bomchil, R. Herino, K. Barla, J.C. Pfister, A. Perio, Ann. Chim. Fr. 8, 41 (1983).
H. Kautsky and H. Zocher, Z. Phys. 9, 267 (1922).
A. Halimaoui et al., Appl. Phys. Lett. 59, 304 (1991).
A. Richter, P. Steiner, F. Kozlowski, and M. Lang, IEEE Electron. Dev. Lett. 12, 691 (1991).
N. Koshida and H. Koyama, Appl. Phys. Lett. 60, 347 (1992).
M.A. Tischler, R.T. Collins, J.H. Stathis, and J.C. Tsang, Appl. Phys. Lett. 60, 639 (1991).
M. Stutzmann, W.B. Jackson, and C.C. Tsai, Phys. Rev. B 32, 23 (1985).
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© 1992 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Stutzmann, M. et al. (1992). Visible luminescence from silicon. In: Festkörperprobleme 32. Advances in Solid State Physics, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108628
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DOI: https://doi.org/10.1007/BFb0108628
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