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Self-interstitials and vacancies in elemental semiconductors between absolute zero and the temperature of melting

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Festkörperprobleme 21

Part of the book series: Advances in Solid State Physics ((ASSP,volume 21))

Abstract

Following an introductory overview of the intrinsic point defects in semiconductors the paper concentrates on Si and Ge, in particular on the exciting recent developments concerning Si self-interstitials. Proceedings from low to high temperatures the discussion covers the following subjects: the low-temperature mobility of point defects induced by particle irradiation or other techniques generating free charge carriers; the geometrical configurations, electric charge states, and thermally activated migration of self-interstitials and vacancies at intermediate temperatures; the predominance of vacancies in Ge and self-interstitials in Si under high-temperature equilibrium conditions. The remainder of the paper deals with the transition of the Si self-interstitials from dumbbell to spread-out configurations between intermediate and high temperatures and—so far as to bring out the relationship to self-interstitials in Si—with concentration-enhanced-diffusion phenomena and with the diffusion of Au in Si.

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References

  1. G. D. Watkins, in: Radiation Damage in Semiconductors P. Baruch ed. (Dunod, Paris 1964) p. 97.

    Google Scholar 

  2. G. D. Watkins, in: Lattice Defects in Semiconductors 1974, F. A. Huntley ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser. No. 23, p. 1.

    Google Scholar 

  3. K. L. Brower, Phys. Rev. B 1, 1908 (1970).

    Article  ADS  Google Scholar 

  4. R. E. McKeighen and J. S. Koehler, Phys. Rev. B 4, 462 (1971).

    Article  ADS  Google Scholar 

  5. P. S. Gwozdz and J. S. Koehler, Bull. Am. Phys. Soc. 17, 307 (1972).

    Google Scholar 

  6. J. Arimura and J. W. MacKay, in: Radiation Effects in Semiconductors, F. L. Vook ed. (Plenum Press, New York 1968), p. 204.

    Google Scholar 

  7. W. D. Hyatt and J. S. Koehler, Phys. Rev. B 4, 1903 (1971).

    Article  ADS  Google Scholar 

  8. G. D. Watkins, Phys. Rev. B 12, 5824 (1975).

    Article  ADS  MathSciNet  Google Scholar 

  9. G. D. Watkins, J. R. Troxell and A. P. Chatterjee, in: Lattice Defects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 16.

    Google Scholar 

  10. J. R. Troxell, A. P. Chatterjee, G. D. Watkins, and L. C. Kimerling, Phys. Rev. B 19, 5336 (1979).

    Article  ADS  Google Scholar 

  11. J. C. Bourgoin and J. W. Corbett, Rad. Effects 36, 157 (1978).

    Article  Google Scholar 

  12. W. Frank U. Gösele, and A. Seeger, in: Proceedings of the International Conference on Radiation Physics in Semiconductors and Related Materials (Tbilisi/USSR, September 1979), in the press.

    Google Scholar 

  13. W. Frank, A. Seeger, and U. Gösele, in: Defects in Semiconductors, J. Narayan and T. Y. Tan eds. (North-Holland, Amsterdam, 1981), in the press.

    Google Scholar 

  14. L. C. Kimerling, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. conf. Ser. No. 46, p. 56.

    Google Scholar 

  15. J. D. Weeks, J. C. Tully, and L. C. Kimerling, Phys. Rev. B 12, 3286 (1975).

    Article  ADS  Google Scholar 

  16. R. E. Whan, Phys. Rev. A 140, 690 (1965).

    Article  ADS  Google Scholar 

  17. J. Bourgoin and F. Mollot, phys. stat. sol. (b) 43, 343 (1971).

    Article  ADS  Google Scholar 

  18. E. I. Blount, J. Appl. Phys. 30, 1218 (1959).

    Article  ADS  Google Scholar 

  19. G. D. Watkins, R. P. Messmer, C. Weigel, D. Peak, and J. W. Corbett, Phys. Rev. Lett. 27, 1573 (1971).

    Article  ADS  Google Scholar 

  20. K. P. Chik, Rad. Effects 4, 33 (1970).

    Article  Google Scholar 

  21. S. I. Tan, B. S. Berry, and W. Frank, in: Ion Implantation in Semiconductors and Other Materials, B. L. Crowder ed. (Plenum Press, New York and London 1973), p. 19.

    Google Scholar 

  22. W. Frank, Rad. Effects 21, 119 (1974).

    Article  Google Scholar 

  23. A. Seeger, H. Föll, and W. Frank, in: Radiation. Effects in Semiconductors 1976, N. B. Urli and J. W. Corbett eds. (Institute of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 12.

    Google Scholar 

  24. W. Frank, in: Lattice Defects in Semiconductors 1974, F. A. Huntley ed. (Institute of Physics, London and Bristol 1975), Inst. Phys. Conf. Ser., No. 23, p. 23.

    Google Scholar 

  25. A. Seeger and W. Frank, in: Radiation Damage and Defects in Semiconductors, J. E. Whitehouse ed. (Institute of Physics, London and Bristol 1972) p. 262.

    Google Scholar 

  26. H. Mehrer, J. Nucl. Materials 69/70, 38 (1978).

    Article  ADS  Google Scholar 

  27. A. Seeger, J. Phys. F. 3, 248 (1973).

    Article  ADS  Google Scholar 

  28. N. L. Peterson, J. Nucl. Materials 69/70, 3 (1978).

    Article  ADS  Google Scholar 

  29. A. Seeger and K. P. Chik, phys. stat sol. 29, 455 (1968).

    Article  ADS  Google Scholar 

  30. A. Seeger, Rad. Effects. 9, 15 (1971).

    Article  ADS  Google Scholar 

  31. A. Seeger, W. Frank, and U. Gösele, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany, ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 148.

    Google Scholar 

  32. H. J. Mayer, H. Mehrer, and K. Maier, in: Radiation Effects in Semiconductors 1976, N. B. Urli and J. W. Corbett eds. (Institute of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 186.

    Google Scholar 

  33. G. Hettich, H. Mehrer, and K. Maier, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 500.

    Google Scholar 

  34. G. L. McVay and A. R. DuCharme, in: Lattice Defects in Semiconductors 1974, F. A. Huntley ed. (Institute of Physics, Bristol and London 1975), Inst. Phys. Conf. Ser. No. 23, p. 91.

    Google Scholar 

  35. D. Shaw, phys. stat. sol. (b) 72, 11 (1975).

    Article  ADS  Google Scholar 

  36. J. A. van Vechten and C. D. Thurmond Phys. Rev. B 14, 3551 (1976).

    Article  ADS  Google Scholar 

  37. R. B. Fair, in: Semiconductor Silicon 1977, H. R. Huff and E. Sirtl eds. (Electrochemical Society, Princeton 1977) p. 968.

    Google Scholar 

  38. S. M. Hu, J. Appl. Phys. 45, 1567 (1974).

    Article  ADS  Google Scholar 

  39. S. M. Hu, J. Vac. Sci. Technol. 14, 17 (1977).

    Article  ADS  Google Scholar 

  40. E. Sirtl, in: Semiconductor Silicon 1977, H. R. Huff and E. Sirtl eds. (Electrochemical Society, Princeton 1977), p. 4.

    Google Scholar 

  41. L. J. Bernewitz and K. R. Mayer, phys. stat. sol. (a) 16, 579 (1973).

    Article  ADS  Google Scholar 

  42. A. J. R. de Kock, Phillips Res. Rep., Suppl. 4, 1 (1973).

    Google Scholar 

  43. H. Föll and B. O. Kolbesen, Appl. Phys. 8, 319 (1975).

    Article  ADS  Google Scholar 

  44. P. M. Petroff and A. J. R. de Kock, J. Cryst. Growth 30, 117 (1975).

    Article  ADS  Google Scholar 

  45. H. Föll, B. O. Kolbesen, and W. Frank, phys. stat. sol. (a) 29, K 83 (1975).

    Article  ADS  Google Scholar 

  46. A. K. Jonscher, Principles of Semiconductor Device Operation (Wiley, New York 1960).

    MATH  Google Scholar 

  47. B. J. Masters and E. F. Gorey, J. Appl. Phys. 49, 2717 (1978).

    Article  ADS  Google Scholar 

  48. P. Baruch, J. Monnier, B. Blanchard, and C. Castaing, Appl. Phys. Lett. 26, 77 (1975).

    Article  ADS  Google Scholar 

  49. P. Baruch, in: Radiation Effects in Semiconductors 1976, N. B. Urli and J. W. Corbett eds. (Institute of Physics, Bristol and London 1977), Inst. Phys. Conf. Ser. No. 31, p. 126 (1977).

    Google Scholar 

  50. W. Akutagawa, H. L. Dunlop, R. Hart, and O. J. Marsh, J. Appl. Phys. 50, 777 (1979).

    Article  ADS  Google Scholar 

  51. W. G. Allen, Sol.-State Electr. 16, 709 (1973).

    Article  ADS  Google Scholar 

  52. D. A. Antoniadis, A. G. Gonzales, and R. W. Dutton, J. Electrochem. Soc. 127, 2243 (1980).

    Article  Google Scholar 

  53. K. H. Nickolas Sol.-State Electr. 9, 35 (1966).

    Article  ADS  Google Scholar 

  54. G. Masetti, S. Solmi, and G. Soncini, Sol.-State Electr. 16, 1419 (1973).

    Article  ADS  Google Scholar 

  55. G. Masetti, S. Solmi, and G. Soncini, Phil. Mag. 33, 613 (1976).

    Article  ADS  Google Scholar 

  56. R. Francis, and P. S. Dobson, J. Appl. Phys. 50, 280 (1979).

    Article  ADS  Google Scholar 

  57. D. A. Antonidis, A. M. Lin, and R. W. Dutton, Appl. Phys. Lett. 33, 1030 (1978).

    Article  ADS  Google Scholar 

  58. U. Gösele, and H. Strunk, Appl. Phys. 20, 265 (1979).

    Article  ADS  Google Scholar 

  59. S. M. Hu, in: Diffusion in Semiconductors, D. Shaw ed. (Plenum Press, London 1973) p. 217.

    Google Scholar 

  60. A. F. W. Willoughby, Rep. Prog. Phys. 41, 1665 (1978).

    Article  ADS  Google Scholar 

  61. A. F. W. Willoughby, J. Phys. D 10, 455 (1977).

    Article  ADS  Google Scholar 

  62. U. Gösele, and W. Frank, in: Defects in Semiconductors, J. Narayan and T. Y. Tan eds. (North-Holland, Amsterdam 1981), in the press.

    Google Scholar 

  63. U. Gösele, F. Morehead, H. Föll, W. Frank, and H. Strunk, in: Proceedings of the 4th International Symposium of Silicon Materials Science and Technology (Minneapolis/USA, May 1981), in the press.

    Google Scholar 

  64. W. M. Lomer, Harwell Report 1540 (AERE, Harwell 1954).

    Google Scholar 

  65. J. G. Dienes, and A. C. Damask, J. Appl. Phys. 29, 1713 (1958).

    Article  ADS  Google Scholar 

  66. R. Sizmann, J. Nuclear Material 69/70, 386 (1978).

    Article  ADS  Google Scholar 

  67. U. Gösele, W. Frank, and A. Seeger, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 538.

    Google Scholar 

  68. H. Saito, and M. Hirata, Japan. J. Appl. Phys. 2, 678 (1963).

    Article  ADS  Google Scholar 

  69. W. R. Wilcox, and T. J. LaChapelle, J. Appl. Phys. 35, 240 (1964).

    Article  ADS  Google Scholar 

  70. W. R. Wilcox, T. J. LaChapelle, and D. H. Forbes, J. Electrochem. Soc. 111, 1377 (1964).

    Article  Google Scholar 

  71. M. J. Hill, M. Lietz, R. Sittig, W. Frank, U. Gösele, and A. Seeger, in: Proceedings of the International Conference on Radiation Physics in Semiconductors and Related Materials (Tbilisi/USSR, September 1979), in the press.

    Google Scholar 

  72. G. J. Sprokel, and J. M. Fairfield, J. Electrochem. Soc. 112, 200 (1965).

    Article  Google Scholar 

  73. J. L. Lambert, Wiss. Ber. AEG-Telefunker 45, 153 (1972).

    Google Scholar 

  74. W. C. Dash, J. Appl. Phys. 31 2275 (1960).

    Article  ADS  Google Scholar 

  75. F. A. Huntley, and A. F. W. Willoughby, Solid-State Electronics 13, 1231 (1970).

    Article  ADS  Google Scholar 

  76. F. A. Huntley, and A. F. W. Willoughby, J. Electrochem. Soc. 120, 414 (1973).

    Article  Google Scholar 

  77. F. A. Huntley, and A. F. W. Willoughby, Phil. Mag. 28, 1319 (1973).

    Article  ADS  Google Scholar 

  78. F. C. Frank, and D. Turnbull, Phys. Rev. 104, 617 (1956).

    Article  ADS  Google Scholar 

  79. U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23, 361 (1980).

    Article  ADS  Google Scholar 

  80. W. Frank, U. Gösele, and A. Seeger, in: Defects and Radiation Effects in Semiconductors 1978, J. H. Albany ed. (Institute of Physics, Bristol and London 1979), Inst. Phys. Conf. Ser. No. 46, p. 514.

    Google Scholar 

  81. M. D. Sturge, Proc. Phys. Soc. (Lond.) 73, 297 (1959).

    Article  ADS  Google Scholar 

  82. A. Seeger and W. Frank, to be published.

    Google Scholar 

  83. W. Meyberg, unpublished.

    Google Scholar 

  84. A. Seeger, phys. stat. sol. (a) 61, 521 (1980).

    Article  ADS  Google Scholar 

  85. U. Gösele, F. Morehead, W. Frank, and A. Seeger, Appl. Phys. Lett. 38, 158 (1981).

    Article  Google Scholar 

  86. W. M. Bullis, Solid-State Electronics 9, 143 (1966).

    Article  ADS  Google Scholar 

  87. R. F. Peart, phys. stat. sol. 15, K 119 (1966).

    Article  ADS  Google Scholar 

  88. J. M. Fairfield, and B. J. Masters, J. Appl. Phys. 38, 3148 (1967).

    Article  ADS  Google Scholar 

  89. J. Hirvonen, and A. Anttila, Appl. Phys. Lett. 35, 703 (1979).

    Article  ADS  Google Scholar 

  90. L. Kalinowski, and R. Seguin, Appl. Phys. Lett. 35, 211 (1979).

    Article  ADS  Google Scholar 

  91. L. Kalinowski, and R. Seguin, Appl. Phys. Lett. 36 171 (1980).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Institut für Physik, Max-Planck-Institut für Metallforschung, Stuttgart, Germany

    Werner Frank

  2. Institut für Theoretische und Angewandte Physik, Universität Stuttgart, Stuttgart, Germany

    Werner Frank

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  1. Werner Frank
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J. Treusch

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Dedicated to Professor Dr. Ing. Dr. rer. nat. h.c. Ulrich Dehlinger on the occasion of his 80th birthday on July 6, 1981.

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© 1981 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Frank, W. (1981). Self-interstitials and vacancies in elemental semiconductors between absolute zero and the temperature of melting. In: Treusch, J. (eds) Festkörperprobleme 21. Advances in Solid State Physics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108606

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  • DOI: https://doi.org/10.1007/BFb0108606

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