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Structure and electronic states in a-Si:H

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Festkörperprobleme 21

Part of the book series: Advances in Solid State Physics ((ASSP,volume 21))

Abstract

An overview of recent theoretical accomplishments in the study of the electronic structure of hydrogenated amorphous silicon is presented. Special emphasis is placed on attempts to elucidate the relationships among bonding, structure and electronic states. This includes the search for an understanding of the nature of the properties of a variety of silicon-hydrogen bonding conformations and bonding coordination defects. Particular attention is paid to the interpretation of results in terms of the effects of bulk-like and surface-like environments, the effects of quantitative and topological disorders, and the formation of band-like and gap-like states.

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  1. Department of Physics, Massachusetts Institute of Technology, 02139, Cambridge, Mass., USA

    John D. Joannopoulos & Douglas C. Allan

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Joannopoulos, J.D., Allan, D.C. (1981). Structure and electronic states in a-Si:H. In: Treusch, J. (eds) Festkörperprobleme 21. Advances in Solid State Physics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108604

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08027-3

  • Online ISBN: 978-3-540-75368-1

  • eBook Packages: Springer Book Archive

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