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Festkörperprobleme 13 pp 309–336Cite as

Fundamentals of MOS Technology

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Part of the book series: Advances in Solid State Physics ((ASSP,volume 13))

Abstract

A survey of the present state of MOS physics and technology is given. After a short introduction into the principles governing the electrical behavior of MOS structures, technological steps and problems to fabricate the elements are discussed. The properties of the silicon surface, the Si−SiO2 interface, the oxide, and the metal electrodes are described. A special section is concerned with ion implantation used in MOS technology. In each case, device aspects are considered.

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Authors and Affiliations

  1. Institut für Angewandte Festkörperphysik der Fraunhofer-Gesellschaft, Freiburg i. Br., Germany

    Adolf Goetzberger & Max Schulz

Authors
  1. Adolf Goetzberger
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  2. Max Schulz
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H. J. Queisser

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© 1973 Friedr. Vieweg+Sohn GmbH, Verlag

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Goetzberger, A., Schulz, M. (1973). Fundamentals of MOS Technology. In: Queisser, H.J. (eds) Festkörperprobleme 13. Advances in Solid State Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108576

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  • DOI: https://doi.org/10.1007/BFb0108576

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  • Print ISBN: 978-3-528-08019-8

  • Online ISBN: 978-3-540-75335-3

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