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On the physics of clean silicon surface

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Festkörperprobleme 13

Part of the book series: Advances in Solid State Physics ((ASSP,volume 13))

Abstract

In this report the results of recent investigations of clean silicon surfaces are reviewed. At the present time most of the data refer to the structural, electrical, and optical properties of (111) surfaces, probably since silicon cleaves along these planes and devices are usually fabricated with (111) oriented slices. However, recently clean (100) surfaces have also attracted interest in connection with electron emitters exhibiting “negative electron affinity”. For the cleaved (111) surface the experimental results may be summarized in the attempt to give elements of a surface band structure, which can be compared to theoretical approaches using LCAO and pseudopotential methods, respectively. These surface band structure studies are based on the corresponding parameters successfully used in bulk band structure calculations. However, the exact surface atom arrangement could not be considered in these theoretical investigations, since the dynamical LEED theory has not been worked out to enable an analysis of the experimentally observed LEED data.

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Authors and Affiliations

  1. Physikalisches Institut and Sonderforschungsbereich 56, Festkörperelektronik, RWTH Aachen, Germany

    Winfried Mönch

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  1. Winfried Mönch
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H. J. Queisser

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© 1973 Friedr. Vieweg+Sohn GmbH, Verlag

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Mönch, W. (1973). On the physics of clean silicon surface. In: Queisser, H.J. (eds) Festkörperprobleme 13. Advances in Solid State Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108574

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  • DOI: https://doi.org/10.1007/BFb0108574

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  • Print ISBN: 978-3-528-08019-8

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