Abstract
The surface electric field associated with a semiconductor inversion or accumulation layer quantizes the motion normal to the surface. The bulk energy bands split into subbands near the surface forming a two-dimensional electron (hole) gas. A self-consistent formulation of the problem is given in the form of coupled Schrödinger and Poisson equations. A review of approximate results of simple limiting cases is given. The condition of surface semiconductor layer in applied magnetic field, causing Landau levels, is discussed. The analogy of the quantum size effect in thin semiconductor films to the quantum effect in the surface layer is outlined. A number of experimental techniques, as magnetoconductivity (Shubnikov-de Haas oscillations), Hall effect, capacitance, magnetocapacitance, piezoresistance, tunneling, and photoresponse measurements were carried out to verify the surface quantization in inversion and accumulation layers of silicon and other semiconductors from the low temperature region up to room temperatures.
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© 1973 Friedr. Vieweg+Sohn GmbH, Verlag
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Dorda, G. (1973). Surface quantization in semiconductors. In: Queisser, H.J. (eds) Festkörperprobleme 13. Advances in Solid State Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108573
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DOI: https://doi.org/10.1007/BFb0108573
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