Abstract
The results of experimental investigations on optical and electrical effects in highly excited semiconductors are summarized. In direct-gap semiconductors, exciton-exciton and exciton-electron collision processes occur. At low temperature, the formation of excitonic molecules is found. All these processes can give stimulated emission. In indirect-gap semiconductors (Ge, Si), at low temperature the condensation of the excitons into a electron-hole liquid consisting of drops of a degenerate electron-hole plasma is observed.
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Bille, J. (1973). Properties of highly excited semiconductors (experimental aspects). In: Queisser, H.J. (eds) Festkörperprobleme 13. Advances in Solid State Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108569
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DOI: https://doi.org/10.1007/BFb0108569
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