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Narrow bandgap semiconductors

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Festkörperprobleme 10

Part of the book series: Advances in Solid State Physics ((ASSP,volume 10))

Abstract

The main band structure features of various narrow bandgap semiconductor families are reviewed. A qualitative first principle discussion is reported, indicating the impact of relativistic corrections. As an example, a particular emphasis is stressed about the semimetal-semiconductor transition in CdxHg1−xTe alloys. Some techniques used in the characterization of extremely narrow gap materials are briefly described, showing the importance of pressure experiments.

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Author information

Authors and Affiliations

  1. Laboratoire de Magnétisme et de Physique des Solides, C.N.R.S., 1, place A. Briand (92), Meudon-Bellevue, (France)

    Christian Vérié

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  1. Christian Vérié
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O. Madelung

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© 1970 Friedr. Vieweg+Sonn GmbH, Verlag

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Vérié, C. (1970). Narrow bandgap semiconductors. In: Madelung, O. (eds) Festkörperprobleme 10. Advances in Solid State Physics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108431

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  • DOI: https://doi.org/10.1007/BFb0108431

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08016-7

  • Online ISBN: 978-3-540-75327-8

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