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Narrow bandgap semiconductors

  • Christian Vérié
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 10)

Abstract

The main band structure features of various narrow bandgap semiconductor families are reviewed. A qualitative first principle discussion is reported, indicating the impact of relativistic corrections. As an example, a particular emphasis is stressed about the semimetal-semiconductor transition in CdxHg1−xTe alloys. Some techniques used in the characterization of extremely narrow gap materials are briefly described, showing the importance of pressure experiments.

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Copyright information

© Friedr. Vieweg+Sonn GmbH, Verlag 1970

Authors and Affiliations

  • Christian Vérié
    • 1
  1. 1.Laboratoire de Magnétisme et de Physique des SolidesC.N.R.S.Meudon-Bellevue(France)

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