Abstract
The hydrogen model of Wannier excitons becomes a complex two-particle problem if the peculiarities of the energy band structure for electrons and holes in real semiconductors are taken into account. In zincblende-type semiconductors with direct band gap the valence-band degeneracy gives rise to a finestructure splitting in the exciton series and to multicomponent excitonic polaritons. In semiconductors with indirect band gap the lineshape of excitons is determined by the combined effect of valence and conduction band dispersion. The theoretical background of these features is outlined and used to give a quantitative understanding of experimental data.
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© 1979 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Rössler, U. (1979). Fine structure, lineshape, and dispersion of wannier excitons. In: Treusch, J. (eds) Festkörperprobleme 19. Advances in Solid State Physics, vol 19. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108326
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DOI: https://doi.org/10.1007/BFb0108326
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