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Nonlinear dynamics of optical semiconductor systems

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Festkörperprobleme 30

Part of the book series: Advances in Solid State Physics ((ASSP,volume 30))

Abstract

Semiconductors exhibit close to the band edge large optical nonlinearities due to many-body effects in the system of the optically excited electrons and holes. Such many-body effects are state filling, screening, energy renormalization and excitonic enhancement, they all contribute to dependence of the optical properties on the electron-hole concentration. This density dependence can give rise to optical instabilities, particularly if one provides optical feedback by means of an optical resonator. As examples we will describe the nonlinear dynamics of passive and active semiconductors in long external cavities, related to the experiments of Klingshirn et al. and of Elsäßer et al.

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References

  1. M. Lindberg, S.W. Koch, and H. Haug, JOSA B 3, 751 (1986)

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  2. H. Haug, S.W. Koch, and M. Lindberg, Physica Scripta T 13, 187 (1986), see also H. Haug, SPIE Vol. 769, 81 (1987)

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  10. For a more elemtary introduction see the recent textbook “Quantum Theory of the Optical and Electronic Properties of Semiconductors”, H. Haug and S.W. Koch, (World Scientific Publ., Singapore 1990)

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Ulrich Rössler

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© 1990 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Haug, H. (1990). Nonlinear dynamics of optical semiconductor systems. In: Rössler, U. (eds) Festkörperprobleme 30. Advances in Solid State Physics, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108296

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  • DOI: https://doi.org/10.1007/BFb0108296

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08038-9

  • Online ISBN: 978-3-540-75346-9

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