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Ultrafast spectroscopy of semiconductors

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Festkörperprobleme 30

Part of the book series: Advances in Solid State Physics ((ASSP,volume 30))

Abstract

Ultrafast laser spectroscopy with time resolution down to 6 femtoseconds has been applied to study optical dephasing, relaxation, and recombination in various semiconductors and semiconductor microstructures. We report some applications of ultrafast laser spectroscopy to bulk and quantum well III–V and II–VI semiconductors in order to illustrate the potential. The characteristics time scales for dephasing, relaxation and recombination are discussed and determined experimentally.

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  1. Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, D-3550, Marburg, Federal Republic of Germany

    Ernst O. Göbel

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Göbel, E.O. (1990). Ultrafast spectroscopy of semiconductors. In: Rössler, U. (eds) Festkörperprobleme 30. Advances in Solid State Physics, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108292

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