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Quantum transport in thin films and inversion layers

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Festkörperprobleme 30

Part of the book series: Advances in Solid State Physics ((ASSP,volume 30))

Abstract

A variety of quantum effects in the low temperature transport properties of thin metallic films and inversion layers were discovered during the past decade. Examples are the quantized Hall effect observed in inversion layers subject to a strong perpendicular magnetic field, the quantum interference (Aharonov-Bohm-like) oscillations of the magnetoresistance of thin, normal metallic cylinders, and the so-called universal conductance fluctuations in mesoscopic samples. Most recently, conductance quantization was reported in quasi-ballistic inversion layers in AlGaAs/GaAs-heterostructures even without magnetic field. Several frequency and time dependent as well as non-linear mesoscopic phenomena were predicted. In this article the physical background of some of the effects is described, and the corresponding theory is outlined.

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  1. Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-3300, Braunschweig, Federal Republic of Germany

    Bernhard Kramer

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  1. Bernhard Kramer
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Ulrich Rössler

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© 1990 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Kramer, B. (1990). Quantum transport in thin films and inversion layers. In: Rössler, U. (eds) Festkörperprobleme 30. Advances in Solid State Physics, vol 30. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108282

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  • DOI: https://doi.org/10.1007/BFb0108282

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