Abstract
The principles of real space transfer and its phenomenological description in terms of the concepts of electron temperature and quasi Fermi levels are reviewed. It is shown that real space transfer is a mechanism to achieve ultrafast switching and storage of charge carriers. The real space transfer-glow cathod analogy, which demonstrates the existence of a new transistor principle, is discussed in detail.
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References
K. Hess, “Phenomenological Physics of Hot Electrons in Semiconductors”, in: Nonlinear Transport in Semiconductors, edited by W.K. Ferry, D. R. Barker and H. Grubin (Plenum Press, 1980). See also K. Hess and N. Holonyak, Jr., Physics Today, 33, 40 (1980), and K. Hess, “Aspects of High Field Transport in Semiconductor Heterolayers and Semiconductor Devices”, Advances in Electronics and Electron Physics 59 (Academic Press, New York 1982).
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S. Luryi, A. Kastalsky, A. C. Gossard and R. Hendel, “Charge Injection Transistor Based on Real-Space Hot-Electron Transfer”, IEEE Transactions on ED-31, 832 (1984).
A. Kastalsky, S. Luryi, A. C. Gossard and R. Hendel, “Field-Effect Transistor with a Negative Differential Resistance”, IEEE Electron Device Letters EDL-5, 57 (1984).
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© 1985 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Hess, K. (1985). Principles of hot electron thermionic emission (real space transfer) in semicoductor heterolayers and device applications. In: Grosse, P. (eds) Festkörperprobleme 25. Advances in Solid State Physics, vol 25. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108164
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DOI: https://doi.org/10.1007/BFb0108164
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Publisher Name: Springer, Berlin, Heidelberg
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