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Deep donor levels (DX centers) in III–V semiconductors: Recent experimental results

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Festkörperprobleme 29

Part of the book series: Advances in Solid State Physics ((ASSP,volume 29))

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Abstract

The DX center, the lowest energy state of the donor in AlxGa1−xAs with x≥0.22, is responsible for the reduced conductivity as well as the persistent photoconductivity observed in this material at low temperature. Extensive studies of the properties of this deep level in Si-doped AlGaAs are reviewed here. It has been shown that the characteristics of the DX center remain essentially unchanged when it is resonant with the conduction band (x≤0.22) with the result that, independent of other compensation mechanisms, the DX center limits the free carrier concentration in Si-doped GaAs to a maximum of about 2·1019 cm−3. Recent measurements suggesting that the lattice relaxation involves the motion of the Si atom from the substitutional site toward an interstitial site are also presented. Evidence for the negative U model, that the DX level is the two electron state of the substitutional donor, is discussed.

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  1. IBM Research Division, T.J. Watson Research Center, P O Box 218, 10598, Yorktown Heights, NY, USA

    Patricia M. Mooney

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  1. Patricia M. Mooney
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Ulrich Rössler

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© 1989 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Mooney, P.M. (1989). Deep donor levels (DX centers) in III–V semiconductors: Recent experimental results. In: Rössler, U. (eds) Festkörperprobleme 29. Advances in Solid State Physics, vol 29. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108014

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  • DOI: https://doi.org/10.1007/BFb0108014

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  • Print ISBN: 978-3-528-08035-8

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