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Scanning tunneling microscopy and spectroscopy on clean and metal-covered Si surfaces

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Festkörperprobleme 29

Part of the book series: Advances in Solid State Physics ((ASSP,volume 29))

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Abstract

Main theoretical concepts and experimental details of scanning tunneling microscopy (STM) are summarized and methods for image processing of the data are described. The spectroscopical use of STM is explained. The application of STM to clean and metal-covered Si surfaces is demonstrated. In particular, results are presented for the spectroscopy of the local electronic structure of Si(111)7×7, for the initial stages of metal atom (Ag) condensation on room temperature Si(111)7×7 in the submonolayer and monolayer range and for an analysis of a metal-induced reconstruction (Si(111)\(\sqrt 3 x\sqrt 3 R30^\circ\)-Ag). Results from metal islands on Si(111) (Ag) are compared with those of a bulk metal single-crystal (Au(111)).

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Authors and Affiliations

  1. Institut für Experimentalphysik, Ruhr-Universität Bochum, Postfach 10 21 48, D-4630, Bochum, Federal Republic of Germany

    Henning Neddermeyer & Stephan Tosch

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  1. Henning Neddermeyer
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  2. Stephan Tosch
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Ulrich Rössler

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© 1989 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Neddermeyer, H., Tosch, S. (1989). Scanning tunneling microscopy and spectroscopy on clean and metal-covered Si surfaces. In: Rössler, U. (eds) Festkörperprobleme 29. Advances in Solid State Physics, vol 29. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108010

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  • DOI: https://doi.org/10.1007/BFb0108010

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08035-8

  • Online ISBN: 978-3-540-75350-6

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