Abstract
Two-dimensional systems constituted by III–V compound semiconductor heterojunctions are first recalled. Optical properties of double heterojunction quantum wells (QW) and transport properties in selectively-doped heterojunction two-dimensional electron gas (2DEG) are described. In particular quantum effects associated with the two-dimensional character of these systems (intersubband transitions, step-like density of states, Shubnikov-de Haas oscillations, quantized Hall effects …) are pointed out. The reduced electron-impurity scattering and the enhanced screening effect in the 2DEG is also studied.
Electronic devices using two-dimensional systems have been found to exhibit higher performances than conventional devices: ultra low threshold current and low temperature-sensitivity for QW lasers and super-low noise amplification and high speed-low power circuit integration for two-dimensional electron gas FETs (TEGFETs). Interpretations of these high performances are given.
These devices which are the basic foundation of modern electronics (optical fiber communication, satellite communication, super-computer …) illustrate the tremendous interest of two-dimensional systems.
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© 1983 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Linh, N.T. (1983). The two-dimensional electron gas and its technical applications. In: Grosse, P. (eds) Festkörperprobleme 23. Advances in Solid State Physics, vol 23. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107977
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