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n-i-p-i Doping superlattices—Tailored semiconductors with tunable electronic properties

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Festkörperprobleme 23

Part of the book series: Advances in Solid State Physics ((ASSP,volume 23))

Abstract

We discuss the concept and the basic properties of a new class of artificial semiconductors. These “n-i-p-i doping superlattices” are a periodic sequence of ultrathin n- and p-doped layers of the same semiconducting material, possibly separated by undoped (i-) layers. Some experimental results are presented as verifications of the theoretical predictions. They also exemplify the wide variety of unusual phenomena in n-i-p-i crystals, which originate from their tunable electronic properties.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Stuttgart, Federal Republic of German

    Gottfried H. Döhler

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  1. Gottfried H. Döhler
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P. Grosse

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© 1983 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Döhler, G.H. (1983). n-i-p-i Doping superlattices—Tailored semiconductors with tunable electronic properties. In: Grosse, P. (eds) Festkörperprobleme 23. Advances in Solid State Physics, vol 23. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107976

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  • DOI: https://doi.org/10.1007/BFb0107976

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  • Print ISBN: 978-3-528-08029-7

  • Online ISBN: 978-3-540-75372-8

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