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Microscopic properties and behavior of metal/semiconductor interfaces

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Festkörperprobleme 23

Part of the book series: Advances in Solid State Physics ((ASSP,volume 23))

Abstract

In the past few years significant advances have been made in observing and understanding the microscopic properties of metal/semiconductor interfaces. Progress in this direction has been particularly striking for the case of transition-metal/Si and corresponding silicide/Si interfaces because: (i) the interface chemistry is somewhat simplified by the existence of well-defined compounds as reaction products; (ii) previous thin film studies have provided a considerable body of background information on some aspects of these reactions; and (iii) new experiments using a broad variety of techniques have addressed and correlated the electronic structure, the atomic structure, and the electrical properties of the interface on a microscopic level. The investigations have demonstrated the dominance of the microscopic chemical interactions in determining the interface properties. This paper reviews the essential scientific issues of metal/semiconductor interfaces and summarizes the evidence acquired and conclusions reached concerning the microscopic interface chemistry and Schottky barrier characteristics of transition-metal/Si and silicide/Si interfaces.

Supported in part by the U.S. Office of Naval Research.

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  1. IBM Thomas J. Watson Research Center, Yorktown Heights, N. Y., USA

    Gary W. Rubloff

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P. Grosse

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© 1983 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Rubloff, G.W. (1983). Microscopic properties and behavior of metal/semiconductor interfaces. In: Grosse, P. (eds) Festkörperprobleme 23. Advances in Solid State Physics, vol 23. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107975

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  • DOI: https://doi.org/10.1007/BFb0107975

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