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Photoinduced absorption in amorphous silicon

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Festkörperprobleme 22

Part of the book series: Advances in Solid State Physics ((ASSP,volume 22))

Abstract

The physics and applications of transient absorption spectroscopy in amorphous silicon associated with photogenerated carriers are discussed. Transitions of holes trapped in the tail close to the valence band into the band produce a midgap absorption band whose shape, temperature and time dependence in good quality a-Si: H can be explained by the multiple trapping model. Measurement of the decay of the oscillator strength of this band in the micro-second range gives information about the recombination process. It is shown that at long times the strength decays as t−α where α is the dispersion parameter of electrons. In the time domain 0.5 to 200 ps photocarrier dynamics were studied by the pump and probe technique. Information was obtained about carriers thermalization, geminate and non-geminate recombination, and trapping in shallow and deep traps. The studied materials were undoped a-Si: H, P and B doped a-Si: H, and a-Si.

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Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Stuttgart, Federal Republic of Germany and Division of Engineering and Department of Physics, Brown University, 02912, Providence, Rhode Island, U.S.A.

    Jan Tauc

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  1. Jan Tauc
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P. Grosse Aachen

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© 1982 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Tauc, J. (1982). Photoinduced absorption in amorphous silicon. In: Grosse Aachen, P. (eds) Festkörperprobleme 22. Advances in Solid State Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107936

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  • DOI: https://doi.org/10.1007/BFb0107936

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08028-0

  • Online ISBN: 978-3-540-75370-4

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