Abstract
Silicon based heterostructures offer the potential of monolithic integration of conventional integrated circuits with superlattices. A material concept is introduced which overcomes the problem of lattice mismatch between superlattice and silicon substrate by a homogeneous, thin, incommensurate buffer layer. Data about critical thicknesses, buffer layer design, strain adjustment, and band offsets are given for the SiGe/Si system. Room temperature mobility enhancement for modulation doped SiGe/Si heterostructures and its device application for a MODFET is described.
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© 1987 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Kasper, E. (1987). Silicon germanium-heterostructures on silicon substrates. In: Grosse, P. (eds) Festkörperprobleme 27. Advances in Solid State Physics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107925
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DOI: https://doi.org/10.1007/BFb0107925
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