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Quasi-One-Dimensional electron systems on GaAs/AlGaAs heterojunctions

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Festkörperprobleme 28

Part of the book series: Advances in Solid State Physics ((ASSP,volume 28))

Abstract

Submicron lithography on semiconductor devices enables us to prepare very narrow inversion channels in which the electrons are free to move only in one dimension. Spatial confinement of the electronic motion in the remaining directions results in quantization of the electron energies, if the channels are sufficiently narrow. Among the various semiconductor systems, in which quasi-one-dimensional (1D) electron channels can be realized, here, preferentially, GaAs/AlGaAs heterojunctions with a periodically microstructured front gate will be discussed. In these structures application of a negative voltage between gate and electron system transforms the initially homogeneous two-dimensional electron system into an array of parallel 1D electron channels. The static magnetoresistance along the channels as well as the dynamic conductivity in the far-infrared spectral range are investigated at low temperatures and in high magnetic fields. Using simple models for the effective confining potential the energetical subband spacing, the electron density, the effective width of, the channels as well as the influence of many particle interactions on the resonance frequencies of the 1D intersubband resonances can be determined.

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  1. Institut für angewandte Physik, Universität Hamburg, Jungiusstr. 11, D-2000, Hamburg 36, Federal Republic of Germany

    Wolfgang Hansen

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  1. Wolfgang Hansen
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U. Rössler

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© 1988 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Hansen, W. (1988). Quasi-One-Dimensional electron systems on GaAs/AlGaAs heterojunctions. In: Rössler, U. (eds) Festkörperprobleme 28. Advances in Solid State Physics, vol 28. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107851

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  • DOI: https://doi.org/10.1007/BFb0107851

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