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Physics of metal organic chemical vapour deposition

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Festkörperprobleme 26

Part of the book series: Advances in Solid State Physics ((ASSP,volume 26))

Abstract

Within the past decade metal organic chemical vapour deposition (MOCVD) has developed into a major method for the growth of single crystal III–V semiconductor layers. Single layers, heterostructures, and superlattice configurations from these materials have been growth successfully by MOCVD. The quality of such layers is close to or even better than obtained by other deposition techniques.

The growth process, in a simplifying manner, can be described by two steps. One is the transport of the molecules, participating in the process, to the gas-solid interface. The other step includes the reactions near or at the interface, leading to the formation of crystalline material.

The transport problem is fairly well understood on a quantitative level in terms of the hydrodynamics in a non-isothermal medium. It is possible nowadays to determine experimentally the relevant hydrodynamical parameters (temperature, velocity, partial pressure) in situ through optical measurements. In addition, computational possibilities have increased so much that realistic boundary conditions can be handled in connection with the hydrodynamic equations. However, the level of experimental knowledge about the kinetic processes at the interface is still in a rather poor state. A number of speculative models exist, which clearly need more input from experiments performed in situ in MOCVD reactors.

This article summarizes the present knowledge from diagnostic investigations with the focus on the MOCVD process for GaAs at atmospheric pressure.

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Authors and Affiliations

  1. I. Physikalisches Institut der RWTH Aachen, D-5100, Aachen, Federal Republic of Germany

    Wolfgang Richter

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  1. Wolfgang Richter
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P. Grosse

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© 1986 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Richter, W. (1986). Physics of metal organic chemical vapour deposition. In: Grosse, P. (eds) Festkörperprobleme 26. Advances in Solid State Physics, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107803

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  • DOI: https://doi.org/10.1007/BFb0107803

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  • Print ISBN: 978-3-528-08032-7

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