Abstract
In semiconductors extremely large gradients of the refractive and/or absorption index exist if the free carrier concentration is a steep local function. Such profiles are stationary due to a corresponding doping inhomogeneity (e. g. doping by diffusion or ion implantation) or in the case of band bending. They are non-stationary in cases of an inhomogeneously time-dependent excitation (e.g. caused by application of pulses of LASER or electron radiation). The propagation of light is considered with respect to the influence of free carrier profiles on the integral transmission, reflection, and absorption of a sample. Different local functions of free carrier concentrations are also considered. Some possible applications of these optical properties will be discussed.
A particular point of interest is the question of the reciprocity of light propagation through inhomogeneous structures.
The aspects of profile analysis by means of optical spectroscopy are considered. The special technique of preparing an inclined surface through the profile leads to a higher spatial resolution in profile analysis based on a technique scanning along the spread-out profile.
In crossed electric and magnetic fields the free carrier compression by Lorentz force leads to a significant free carrier profile with components of enhancement but also of depletion. If the processes of photon extraction by free ocarrier generation dominates the integral, radiation emitted from the semiconductor can be lower than its equilibrium temperature radiation. This phenomenon of “negative luminescence radiation” is experimentally verified and will be discussed.
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© 1986 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Keßler, F.R. (1986). Optics with gradients of free carrier concentration. In: Grosse, P. (eds) Festkörperprobleme 26. Advances in Solid State Physics, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107801
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