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Band offsets in heterostructures

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Festkörperprobleme 26

Part of the book series: Advances in Solid State Physics ((ASSP,volume 26))

Abstract

The various experimental techniques of band-offset determinations in semiconductor heterojunctions are discussed. Special reference is made to their application to (Ga, Al)As/GaAs. We then review heuristic procedures for the band-offset prediction: i) band-edge alignment according to energy-level position of transition metal deep impurities and ii) using differences in Schottky-barrier heights. Finally, we comment on a possible threefold connection between band-edge offsets, deep impurities and Schottky barriers.

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Authors and Affiliations

  1. Institut für Experimentalphysik, Johannes Kepler Universität Linz, A-4040, Linz, Austria

    Helmut Heinrich

  2. Institute of Physics, Polish Academy of Sciences, Al Lotnikow, 32/46, 02-668, Warszawa, Poland

    Jerzy M. Langer

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  1. Helmut Heinrich
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  2. Jerzy M. Langer
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P. Grosse

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© 1986 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Heinrich, H., Langer, J.M. (1986). Band offsets in heterostructures. In: Grosse, P. (eds) Festkörperprobleme 26. Advances in Solid State Physics, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107800

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  • DOI: https://doi.org/10.1007/BFb0107800

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