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Radiative recombination in amorphous semiconductors

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Festkörperprobleme 17

Part of the book series: Advances in Solid State Physics ((ASSP,volume 17))

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Abstract

Radiative recombination is observed in amorphous silicon and in the chalcogenide glasses as efficient luminescence. According to current models, radiative recombination in the chalcogenides occurs at network defects including relatively large Stokes shifts. In contrast, amorphous silicon exhibits no or only small Stokes shifts, and the luminescence spectra are explained by transitions between band tails, or between band tails and defect states. In both groups of materials Coulomb attraction between electrons and holes plays an important role.

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Authors and Affiliations

  1. Fachbereich Physik der Philipps-Universität Marburg, Marburg, Germany

    Roland Fischer

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  1. Roland Fischer
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J. Treusch

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© 1977 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Fischer, R. (1977). Radiative recombination in amorphous semiconductors. In: Treusch, J. (eds) Festkörperprobleme 17. Advances in Solid State Physics, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107759

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  • DOI: https://doi.org/10.1007/BFb0107759

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