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Prozeßsimulation: Stand der Technik

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Festkörperprobleme 36

Part of the book series: Advances in Solid State Physics ((ASSP,volume 36))

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Zusammenfassung

Die Simulation technologischer Prozesse im Zuge der Fertigung von Halbleiterbauelementen hat sich weltweit als unentbehrliches Hilfsmittel sowohl für die Verbesserung bestehender als auch für die Neuentwicklung von Herstellungsverfahren etabliert. Der Schwerpunkt des Einsatzes liegt vor allem bei hochintegrierten Bauelementen, wo es infolge der stetig fortschreitenden Miniaturisierung unbedingt erforderlich ist, auch bislang als nebensächlich bezeichnete Phänomene möglichst genau zu erfassen. Die in Verwendung befindlichen Programmpakete erlauben im allgemeinen die Simulation sämtlicher wichtiger Prozeßschritte wie Lithographie, Ionenimplantation, Ausheilen (Diffusion), Oxidation, Ätzen und Abscheidung. Derzeit stehen zwar noch Simulatoren im Vordergrund, welche für den überwiegenden Teil der Prozeßschritte nur zwei Ortskoordinaten berücksichtigen—der eindeutige Trend geht allerdings in Richtung dreidimensionaler Behandlung in allen Modulen. Sowohl parallel zu dieser Entwicklung aber auch im Zusammenhang mit der Einbindung der dritten ortsdimension hat nach wie vor die Entwicklung immer feinerer physikalischer Modelle hohe Priorität, um mit dem rasanten Fortschritt in der Technologie Schritt halten zu können.

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  1. Institut für Mikroelektronik, Technische Universität Wien, Gußhausstraße 27-29, A-1040, Wien, Austria

    Erasmus Langer & Siegfried Selberherr

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Langer, E., Selberherr, S. (1997). Prozeßsimulation: Stand der Technik. In: Helbig, R. (eds) Festkörperprobleme 36. Advances in Solid State Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107674

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