Abstract
Well-ordered quantum-dot arrays are formed in a new self-organizing growth mode found in the metalorganic vapor-phase epitaxy (MOVPE) of lattice mismatched systems on high-index semiconductor surfaces. On GaAs (311)B substrates, strained InGaAs films spontaneously interact with AlGaAs buffer layers to form ordered arrays of disk-shaped InGaAs quantum dots buried within AlGaAs microcrystals due to lateral mass transport. The size and distance of the disks can be controlled independently in the nanometer range by the In composition and the InGaAs layer thickness, respectively, without change in the homogeneity in size and shape. The formation of buried quantum disks occurs not only on other GaAs (n11)B substrates but also in the case of InP (311)B substrates. The uniformity and the ordering of the disks are optimum on GaAs (311)B substrates which is directly reflected in the narrow photoluminescence linewidth and high efficiency. On the other hand, on GaAs (n11)A substrates one-a d zero-dimensional self-faceting by step bunching produces wire-and dot arrays on GaAs (311)A and GaAs (211)A substrates, respectively.
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Nötzel, R., Temmyo, J., Kozen, A., Tamamura, T., Fukui, T., Hasegawa, H. (1996). Self-ordered quantum dots: A new growth mode on high-index semiconductor surfaces. In: Helbig, R. (eds) Advances in Solid State Physics 35. Advances in Solid State Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107542
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