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Structural properties of lattice-mismatched compound semiconductor heterostructures

  • D. Gerthsen
  • K. Tillmann
  • M. Lentzen
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 34)

Abstract

The structural properties of semiconductor heterostructures are determined by the lattice parameter mismatch, the growth technique and the growth conditions. Studying in particular the early stages of the growth by experimental techniques with high spatial resolution (high-resolution transmission electron microscopy, scanning tunneling microscopy) a detailed knowledge of the mechanisms of the epitaxial growth has been achieved. In addition to reviewing some of the most recent results on the mechanisms of the epitaxial growth studies of MBE grown InxGa1−x As/GaAs(100) and GaAs/Si(100) heterostructures are presented. Focusing on heteroepitaxial systems with larger misfits where the three-dimensional growth modes prevail the different stages of the growth, the relaxation of the lattice-parameter mismatch and the development of the defect structure have been studied.

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Bibliogrpahy

  1. [1]
    A. Ourmazd, R. Hull. R. T. Tung, in Materials Science and Technology vol. 4, VCH Publishing, (1993), 379.Google Scholar
  2. [2]
    U. Köhler, O. Jusko, G. Pietsch, B. Müller, M. Henzler, Surf. Sci. 248 (1989), 321CrossRefGoogle Scholar
  3. [3]
    M. Lagally, Physics Today 11 (1993), 24CrossRefGoogle Scholar
  4. [4]
    J. Knall, J. B. Pethica, Surf. Sci. 265 (1992), 156CrossRefADSGoogle Scholar
  5. [5]
    J. H. van der Merve, Crit. Reviews in Solid and Statrials Science 17 (1991), 187CrossRefGoogle Scholar
  6. [6]
    J. W. Matthews, in Dislocations in Solids, vol. 2 chapter 7, ed. F.R.N. Nabarro, (1977), 461Google Scholar
  7. [7]
    R. Hull, J. C. Bean, Crit. Reviews in Solid State and Materials Science 17 (1992), 507CrossRefGoogle Scholar
  8. [8]
    C. W. Snyder, B. G. Orr, Kessler, L. M. Sander, Phys. Rev. Lett. 66 (1991), 3032CrossRefADSGoogle Scholar
  9. [9]
    M. Horn-von Hoegen, M. Pook, A. Al Falou, B. H. Müller, M. Henzler, Surface Science 284 (1993), 53CrossRefADSGoogle Scholar
  10. [10]
    M. Lentzen, D. Gerthsen, A. Förster, K. Urban, Appl. Phys. Lett. 60 (1992), 74.CrossRefADSGoogle Scholar
  11. [11]
    K. Chr. Tillmann, Diploma Thesis 1993, Research Center Jülich GmbHGoogle Scholar
  12. [12]
    H. Tatsuoka, H. Kuwabara, J. Cryst. Growth 117 (1992), 554CrossRefADSGoogle Scholar
  13. [13]
    D. Gerthsen, Phil Mag. A 67 (1992), 1365Google Scholar
  14. [14]
    J. M. Bonar, R. Hull, J. F. Walker, R. Malik, Appl. Phys. Lett. 60 (1992), 1327.CrossRefADSGoogle Scholar
  15. [15]
    M. Albrecht, S. Christiansen, H. P. Strunk, P. O. Hansson, E. Bauser, Conf. Proc. Gadest '93, H. G. Grimmeis, M. Kittler, H. Richter eds., Solid State Phenomena Vol. 32–33, Scitec Publ. Switzerladn (1993), 433.Google Scholar
  16. [16]
    D. Hull, Introduction to Dislocations, Pergamon Press, (1981), 101Google Scholar
  17. [17]
    B. C. De Cooman, C. B. Carter, Acta Met. 37 (1989), 2765CrossRefGoogle Scholar
  18. [18]
    D. Gerthsen, Proceedings of the XIIth Internat. Congress for Electron Microscopy in Seattle (USA), 1990, vol. 4: Material Science, eds. L. D. Peachey and D. B. Williams, 342Google Scholar
  19. [19]
    V. Krishnamoorthy, Y. W. Lin, R. M. Park, J. Appl. Phys., 72 (1992), 1752CrossRefADSGoogle Scholar
  20. [20]
    F. K. LeGoues, B. S. Meyerson, J. F. Morar, P. D. Kirchner, J. Appl. Phys. 71 (1992), 4230CrossRefADSGoogle Scholar
  21. [21]
    F. Ernst, P. Pirouz, J. Mat. Res. 4 (1989), 834CrossRefADSGoogle Scholar
  22. [22]
    D. Gerthsen, D. K. Biegelsen, F. A. Ponce, J. C. Tramontana, J. Cryst. Growth 106 (1990), 157CrossRefADSGoogle Scholar
  23. [23]
    A. Lefebvre, G. Vanderschaeve, Phys. Stat. Sol. (a) 107 (1988), 647CrossRefADSGoogle Scholar
  24. [24]
    S. F. Fang, K. Adomi, S. Iyer, H. Morkoc, H. Zabel, C. Choi, N. Otsuka, J. Appl. Phys. 68 (1990), R31CrossRefADSGoogle Scholar
  25. [25]
    S. Guha, A. Madhukar, K. C. Rajkumar, Appl. Phys. Lett. 57 (1990), 2110CrossRefADSGoogle Scholar
  26. [26]
    F. Glas, C. Guille P. Hénoc, F. Houzay, Inst. Phys. Conf. Ser. 87 (1987), 71Google Scholar
  27. [27]
    R. Hull, A. Fischer-Colbrie, Appl. Phys. Lett. 50 (1987), 851CrossRefADSGoogle Scholar
  28. [28]
    E. Bauer, J. H. van der Merve, Phys. Rev. B 33 (1986), 3657CrossRefADSGoogle Scholar
  29. [29]
    J. Tersoff, Phys. Rev. B 43 (1986), 9377Google Scholar
  30. [30]
    D. J. Eaglesham, M. Cerullo, Phys Rev. Lett. 64 (1990), 1943.CrossRefADSGoogle Scholar
  31. [31]
    J. C. Bean, MRS Symp. Proc. 126 (1988), 111Google Scholar
  32. [32]
    M. Albrecht, S. Christiansen, P. O. Hansson, H. P. Strunk, E. Bauser, in Polycrystalline Semiconductors III, H. P. Strunk, J. H. Werner, B. Bonnaud eds., Solid State Phenomena, Scitec Publ, Switzerland, (1994), 41Google Scholar
  33. [33]
    H. Alexander, P. Haasen, Solid State Phys. 22 (1968), 27CrossRefGoogle Scholar
  34. [34]
    I. Yonenaga, K. Sumino, phys. stat. sol. (a) 131 (1992), 663CrossRefADSGoogle Scholar
  35. [35]
    H. Siethoff, J. Völkl, D. Gerthsen, H. G. Brion, phys. stat. sol. (a) 101 (1987), K13CrossRefADSGoogle Scholar
  36. [36]
    B. W. Dodson, J. Y. Tsao, Appl. Phys. Lett. 51 (1987), 1325CrossRefADSGoogle Scholar
  37. [37]
    D. K. Biegelsen, F. A. Ponce, A. J. Smith, J. C. Tramontana, Appl. Phys. Lett. 61 (1987) 1856Google Scholar
  38. [38]
    J. R. Willis, S. C. Jain, R. Bullough, Phil. Mag. A 62 (1990), 115CrossRefADSGoogle Scholar
  39. [39]
    J. W. Matthews, Surface Science 31 (1972), 241CrossRefADSGoogle Scholar
  40. [40]
    N. Cabrera, Surf. Sci. 2 (1964), 320CrossRefADSGoogle Scholar
  41. [41]
    K. Jagannadham, J. Narayan, Materials Science and Engineering A 113 (1989), 65CrossRefGoogle Scholar
  42. [42]
    R. Vincent, Phil. Mag. 19 (1969), 1127CrossRefADSGoogle Scholar

Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1995

Authors and Affiliations

  • D. Gerthsen
    • 1
  • K. Tillmann
    • 1
  • M. Lentzen
    • 2
  1. 1.Laboratorium für ElektronenmikroskopieUniversität (TH) KarlsruheKarlsruheGermany
  2. 2.Institut für FestskörperforschungForschungszentrum JülichJülichGermany

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