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Chalcogens as point defects in silicon

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Advances in Solid State Physics

Part of the book series: Advances in Solid State Physics ((ASSP,volume 24))

Abstract

The elements of the chalcogen group form a large number of point-defects in silicon. “Pure” and “mixed” donor complexes are observed in S, Se, and Te doped Si in addition to isolated, probably substitutional, atoms. The tendency to form point-defect complexes increases from Te to O with increasing electronegativity and decreasing tetrahedral atomic radii. This tendency culminates for oxygen which may form a series of high-order complexes (“thermal donors”) as well as precipitates depending on the specific thermal treatment. Ground and excited states of the different chalcogen centers are observed with infrared-absorption spectroscopy. With this method the formation kinetics of thermal donors may be investigated also. Examples for corresponding results are given and several models for thermal donors are discussed.

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Authors and Affiliations

  1. Heliotronic GmbH, Burghausen, Federal Republic of Germany

    Peter Wagner, Claus Holm & Erhard Sirtl

  2. Wacker-Chemie, Burghausen, Federal Republic of Germany

    Robert Oeder

  3. Wacker-Chemitronic, Burghausen, Federal Republic of Germany

    Werner Zulehner

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  1. Peter Wagner
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  2. Claus Holm
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P. Grosse

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© 1984 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Wagner, P., Holm, C., Sirtl, E., Oeder, R., Zulehner, W. (1984). Chalcogens as point defects in silicon. In: Grosse, P. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107451

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