Abstract
In the field of amorphous semiconductors hydrogenated amorphous silicon (a-Si:H) is of particular interest both for research and application owing to its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.
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© 1984 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Fuhs, W. (1984). Transport and recombination in hydrogenated amorphous silicon. In: Grosse, P. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107449
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DOI: https://doi.org/10.1007/BFb0107449
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