Abstract
Initially, the milestones in material and device technology based on silicon are used to explain the various trends in this most important sector of electronics. Emphasis is put on the state of the art in large-scale operating hyperpure polycrystalline rods as well as float-zoned and crucible-pulled single crystals. Further production stages ending with polished slices and epitaxial layers also are considered in this survey. Economical aspects are discussed finally in the light of fruitful interaction between device manufacturers and materials producers.
Preview
Unable to display preview. Download preview PDF.
References
Scaff, J. H., Metallurg. Trans. 1, 561 (1970) (review article).
Bardeen, J. and Brattain, W., Phys. Rev. 74, 232 (1948).
Amberger, E., Doctoral Thesis, Univ. Munich (1956).
Bischoff, F., DBP 1102 117 and 1140 549 (both field 5-18-54); see also Hölbling, R., Z. angew. Chem. 40, 655 (1927).
Teal, G. K. and Little, J. I., Phys. Rev. 78, 647 (1950); see also czochralski, J., Z. phys. Chem. 92, 219 (1917).
Teal, G. K. and Buehler, E., Phys. Rev. 78, 140 (1952).
Pfann, W. G., Trans. AIME 194, 747 (1952); Pfann, W. G., “Zone Melting”, Wiley & Sons, New York (1958).
Keck, P. H. and Golay, M. J. E., Phys. Rev. 89, 1297 (1953).
Emeis, R., Z. Naturforsch. 9a, 67 (1954).
Dash, W. C., J. appl. Phys. 29, 736 (1958).
Ziegler, G., Z. Naturforsch. 16a, 219 (1961).
Runyan, W. R., “Silicon Semiconductor Technology”, mcGraw-Hill, New York (1965).
Spenke, E., in: “Semiconductor Silicon”, p. 1. E. L. Kern and R. R. Haberecht (eds.), The Electrochemical Society Inc., New York (1969).
Dietze, W. and Mühlbauer, A., Chemiker-Ztg. 97, 151 (1973).
Enk, E. and Nickl, J., DBP 1067 010 (filed 4-11-58); Enk, E., Nickl, J., and Teich, H., DBP 1105 398 (filed 3-10-60).
Sirtl, E., in: “Festkörperprobleme VT” (Advances in Solid State Physics) p. 1 (29). O. Madelung (ed.), Pergamon-Vieweg, Braunschweig (1967).
Hoffmann, A., in: “Halbleiterprobleme VI”, p. 152. W. Schottky (ed.), Vieweg & Sohn, Braunschweig (1961).
Sirtl, E. and Reuschel, K., Z. anorg. allg. Chem. 332, 113 (1964).
Lever, R. F., IBM-Journal 8, 460 (1964).
Sirtl, E., Hunt, L. P., and Sawyer, D. H., J. Electrochem. Soc. 121, 919 (1974).
Sutton, R. P., ref. as in “. p. 214.
Bawa, M. S., Goodman, R. C., and Truitt, J. K., in: “Chemical Vapor Deposition”, G. F. Wakefield and J. M. Blocher, Jr. (eds.), The Electrochemical Society, Inc., Princeton (1973).
See Reuschel, K., Siemens-Zeitschr. 41, 669 (1967).
Dietze, W., Hunt, L. P., and Sawyer, D. J., J. electrochem. Soc. 121, 1112 (1974)
Carruthers, J. R., in: “Preparation and Properties of Solid State Materials”, W. R. Wilcox (ed.), Dekker, New York (1974).
Keller, W., Feinwerktechnik 77, 107 (1973).
Lutz, E., Herrmann, H., and Herzer, H., paper given at the DPG Fall Meeting, Nuremberg (1974).
Herzer, H. and Mücke, E., 3. DFG Colloquium on Power Devices, Freiburg (1974).
Hulme, K. F. and Mullin, J. B., Phil. Mag. 4, 1286 (1959).
Dikhoff, J. A. M., Solid-State Electron. 1, 202 (1960).
Andersen, A. L., Thesis, Techn. Univ. of Denmark, Copenhagen (1967).
Ciszek, T. F., J. Crystal Growth 10, 263 (1971).
Vogel, F. L., Jr. Acta Metallurg. 3, 245 (1955).
Penning, P., Philips Res. Repts. 13, 79 (1958).
Huff, H. R. and Bracken, R. C., ref. as in “. p. 610.
Vieweg-Gutberlet, F. G., in: “Semiconductor Silicon 1973”, H. R. Huff and R. R. Burgess (eds.), The Electrochemical Society, Inc., Princeton (1973).
Tweet, A. G., J. appl. Phys. 30, 2002 (1959).
Plaskett, T. S., Trans. Metallurg. Soc. AIME 233, 809 (1965).
Abe, T., Sannizo, T., and Maruyama, S., Jap. J. appl. Phys. 5, 458 (1966).
De Kock, A. J. R., J. electrochem. Soc. 118, 1851 (1971).
De Kock, A. J. R., Roksnoer, P. J., and Boonen, P. G. T., J. Crystal Growth 22, 311 (1974).
Vieweg-Gutberlet, F. G., International Conference on Lattice Defects in Semiconductors, Freiburg (1974).
Bernewitz, L. I., Kolbesen, B. O., Mayer, K. R., and Schuh, G. E., Appl. Phys. Letters 25, 277 (1974).
Föll, H. and Kolbesen, B. O., (private communication).
Secco D'Aragona, F., phys. stat. sol. (a) 7, 577 (1971); bernewitz, L. J. and Mayer, K. R., ibid.phys. stat. sol. (a) 16, 579 (1973).
De Kock, A. J. R., Philips Res. Repts. Suppl. 1973, No. 1.
Ciszek, T. F., ref. as in “. p. 156.
Mühlbauer, A. and Sirtl, E., phys. stat. sol. (a) 23, 555 (1974).
Abe, T., J. Crystal Growth 24/25, 463 (1974).
Burtscher, J., Proc. European Summer School, “Scientific Principles of Semiconductor Technology”, p. 63. Bad Boll (1974).
Keller, W. and Mühlbauer, A., phys. sta. sol. (a) 25, 149 (1974).
Burton, J. A., Prim, R. C., and Slichter, W. P., J. Chem. Phys. 21, 1987 (1953).
Burtscher, J., Krausse, P., and Voss, P., ref. as in “. p. 581.
Witt, A. F., Lichtensteiger, M., and Gatos, H. C., J. electrochem. Soc. 120, 1119 (1973).
Vieweg-Gutberlet, F. G., Solid-State Electron. 12, 731 (1969).
Mayer, K. R., J. electrochem. Soc. 120, 1780 (1973).
See e. g. Dearnaley, G. and Northrop, D. C., “Semiconductor Counters for Nuclear Radiation”, E. & F. N. Spon, Ltd., London (1964).
Schnoeller, M., IEEE Trans. Electron. Device 21, 313 (1974).
Herrmann, H. and Herzer, H., paper submitted to J. electrochem. Soc.
Joshi, M. L. and Howard, J. K., in: “Silicon Device Processing”, p. 313. NBS Special Publication 337, Washington (1970).
Soper, R. B., ibid., in: “Silicon Device Processing”, p. 313. NBS Special, Publication 337, Washington p. 412.
Buck, T. M., ibid., in: “Silicon Device Processing”, p. 313. NBS Special, Publication 337, Washington p. 419.
Schwuttke, G. H., IBM Techn. Rep. Nr. 1-4 (1973–74) contract No. DAHC 15-72-C-0274.
See e. g. Sugita, Y., Aoshima, T., Yoneda, K., and Yoshinaka, A., J. Electron. Mat. 4, 175 (1975).
Sirtl, E., ref. as in Proc. European Summer School, “Scientific Principles of Semiconductor Technology”, Bad Boll (1974). p. 139 (review article on vapor phase epitaxy), other pertinent literature will be found in abundance in the books referred under [13, 22, 34, 57].
Seki, Y., Tanno, K., Matsuri, J., and Kawamura, T., ref. as in “. p. 653.
Hammond, M. L. and Cox, W. P., ref. as in “Silicon Device Processing”, NBS Special Publication 337, Washington (1970).
Nicollian, E. H. and Götzberger, A., Bell Syst. Techn. J. 46, 1055 (1967).
Gray, P. V. and Brown, D. M., Appl. Phys. Letters 8, 31 (1966).
Beyen, W. J. and Cecil, O. B., ref. as in “. p. 1.
Varker, C. J. and Ravi, K. V., ibid “. p. 670.
Lesk, J. A., ibid. “. p. 35.
Graff, K., Pieper, H., and Goldbach, G., ref. as in “. p. 170.
Graff, K. and Pieper, H., paper given at Electronic Materials Conference, Metallurg. Soc. AIME, Boston (1974).
Ciszek, T. F., Proc. Int. Conf. on Photovoltaic Power Generation, p. 159, Hamburg (1974).
Ciszek, T. F., Mat. Res. Bull. 7, 731 (1972).
LaBelle, H. E., Jr., ibid. 6, 581 (1971).
Author information
Authors and Affiliations
Editor information
Rights and permissions
Copyright information
© 1975 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
About this chapter
Cite this chapter
Herrmann, H., Herzer, H., Sirtl, E. (1975). Modern silicon technology. In: Queisser, H.J. (eds) Festkörperprobleme 15. Advances in Solid State Physics, vol 15. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107382
Download citation
DOI: https://doi.org/10.1007/BFb0107382
Published:
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-528-08021-1
Online ISBN: 978-3-540-75347-6
eBook Packages: Springer Book Archive