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Confined carrier quantum states in ultrathin semiconductor heterostructures

  • Raymond Dingle
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 15)

Abstract

New effects associated with the quantization of confined carrier motion in ultrathin semiconductor heterostructures have recently been observed. Optical and electrical studies of molecular-beam grown AlxGa1−xAs-GaAs structures consisting of to 100 layers with layers as thin as 10 Å have revealed discrete structures which are difficelt to analyze with usual bulk crystal methods. A complete understanding can be achieved with simple one-dimensional quantum mechanical models. In particular, the analysis of the optical data gives detailed quantitative information about confined electrons, light and heavy holes, and excitons in the GaAs layers. The relevance of these results from band structure analysis to device technology will be considered.

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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1975

Authors and Affiliations

  • Raymond Dingle
    • 1
  1. 1.Bell LaboratoriesMurray HillUSA

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