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Festkörperprobleme 15 pp 21–48Cite as

Confined carrier quantum states in ultrathin semiconductor heterostructures

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Part of the book series: Advances in Solid State Physics ((ASSP,volume 15))

Abstract

New effects associated with the quantization of confined carrier motion in ultrathin semiconductor heterostructures have recently been observed. Optical and electrical studies of molecular-beam grown AlxGa1−xAs-GaAs structures consisting of to 100 layers with layers as thin as 10 Å have revealed discrete structures which are difficelt to analyze with usual bulk crystal methods. A complete understanding can be achieved with simple one-dimensional quantum mechanical models. In particular, the analysis of the optical data gives detailed quantitative information about confined electrons, light and heavy holes, and excitons in the GaAs layers. The relevance of these results from band structure analysis to device technology will be considered.

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Authors and Affiliations

  1. Bell Laboratories, 07974, Murray Hill, New Jersey, USA

    Raymond Dingle

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  1. Raymond Dingle
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H. J. Queisser

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© 1975 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Dingle, R. (1975). Confined carrier quantum states in ultrathin semiconductor heterostructures. In: Queisser, H.J. (eds) Festkörperprobleme 15. Advances in Solid State Physics, vol 15. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107373

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  • DOI: https://doi.org/10.1007/BFb0107373

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  • Print ISBN: 978-3-528-08021-1

  • Online ISBN: 978-3-540-75347-6

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