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Liquid-phase epitaxy of GaAs and the incorporation of impurities

  • Karl-Heinz Zschauer
Chapter
Part of the Advances in Solid State Physics book series (ASSP, volume 15)

Abstract

For III–V semiconductors liquid-phase epitaxy (LPE) has become a useful process to produce both high-purity crystals and multilayer structures for practical applications. Firstly the basic principles of LPE are reviewed. The the experimental technique and the growth of high-purity layers are described.

The incorporation of impurities during LPE is often a process far from thermodynamic equilibrium. Several factors causing departure from equilibrium are described. Macroscopic growth kinetics, the Schottky-barrier of the liquid metal-semiconductor system and the adsorption of impurities at the growing interface.

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Copyright information

© Friedr. Vieweg & Sohn Verlagsgesellschaft mbH 1975

Authors and Affiliations

  • Karl-Heinz Zschauer
    • 1
  1. 1.Forschungslaboratorien der Siemens AGMünchenGermany

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