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Kinetic confinement of electrons in modulated semiconductor structures

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From Quantum Mechanics to Technology

Part of the book series: Lecture Notes in Physics ((LNP,volume 477))

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Abstract

A new type of electron confinement in modulated semiconductor systems is proposed. The confinement occurs when the effective mass of electrons in the central region of the structure is higher than that in the outside regions. This results in a ‘kinetic well’ produced by the transverse free motion. The calculated density of confined states is similar but not identical to that of the potentially bound 2D states. It is shown that the presence of an external magnetic field parallel to the growth direction stabilizes and controls the kinetically confined states. The resulting levels are strongly nonlinear functions of magnetic field intensity. We discuss specific structures in which the kinetic confinement of electrons would be possible.

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Authors and Affiliations

  1. Institute of Physics, Polish Academy of Sciences, 02-668, Warsaw, Poland

    M. Kubisa & W. Zawadzki

Authors
  1. M. Kubisa
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  2. W. Zawadzki
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Editor information

Zygmunt Petru Jerzy Przystawa Krzysztof Rapcewicz

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© 1996 Springer-Verlag

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Kubisa, M., Zawadzki, W. (1996). Kinetic confinement of electrons in modulated semiconductor structures. In: Petru, Z., Przystawa, J., Rapcewicz, K. (eds) From Quantum Mechanics to Technology. Lecture Notes in Physics, vol 477. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0106017

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  • DOI: https://doi.org/10.1007/BFb0106017

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-61792-1

  • Online ISBN: 978-3-540-70724-0

  • eBook Packages: Springer Book Archive

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