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Semiconductor modelling via the Boltzmann equation

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Mathematical Aspects of Fluid and Plasma Dynamics

Part of the book series: Lecture Notes in Mathematics ((LNM,volume 1460))

Abstract

This paper is devoted to the presentation of a new numerical method for the simulation of the Boltzmann Transport Equation of semiconductors, the weighted particle method.

In this paper, we will describe the kinetic model of the Boltzmann Equation and present the numerical method that we propose; we will provide numerical results of simulations in two distinct cases: first an homogeneous problem and then an inhomogeneous one, where one has to solve a coupled Boltzmann-Poisson system.

This work has been partially supported by the "Centre National d'Etudes des Télécommunications", under grant no 878B087 LAB/ICM/TOH, by the "Direction des Etudes et Recherches Techniques", under grant no 87/283 and by the CNRS, under the "ATP-Mathématiques et Informatique".

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Authors and Affiliations

  1. Ecole Polytechnique, Centre de Mathématiques Appliquées, Unité Associée CNRS no 756, 91128, Palaiseau Cedex, France

    P. Degond, F. Guyot-Delaurens, F. J. Mustieles & F. Nier

Authors
  1. P. Degond
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  2. F. Guyot-Delaurens
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  3. F. J. Mustieles
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  4. F. Nier
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Editor information

Giuseppe Toscani Vinicio Boffi Salvatore Rionero

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© 1991 Springer-Verlag

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Degond, P., Guyot-Delaurens, F., Mustieles, F.J., Nier, F. (1991). Semiconductor modelling via the Boltzmann equation. In: Toscani, G., Boffi, V., Rionero, S. (eds) Mathematical Aspects of Fluid and Plasma Dynamics. Lecture Notes in Mathematics, vol 1460. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0091363

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  • DOI: https://doi.org/10.1007/BFb0091363

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-53545-4

  • Online ISBN: 978-3-540-46779-3

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