Abstract
The source of the metallic resistivity in TTF-TCNQ and related compounds has been a subject of much interest and dispute. Many candidates have been suggested but few have been considered extensively. In this contribution we will consider in detail the possibility that the electron-electron interaction is responsible for the resistivity in these compounds.
We have developed a simple relation for the resistivity due to electron-electron scattering based on one-dimensional tight-binding bands along with a three-dimensional treatment of the more isotropic Coulomb scattering potential. The relation includes the temperature and pressure dependence of the lattice parameters, the bandwidths and the charge transfer. The result is an expression for the resistivity that accounts well for both its temperature and pressure dependence as well as for the contribution of the scattering term to the thermopower.
We have also considered the origin of the temperature independent part of the optical resistivity. We show that the observed magnitude can readily arise from electron-molecular vibration interactions.
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Seiden, P.E., Grant, P.M. (1979). On the electron-electron interaction as the source of the metallic resistivity in TTF-TCNQ. In: Bariŝić, S., Bjeliŝ, A., Cooper, J.R., Leontić, B.A. (eds) Quasi One-Dimensional Conductors I. Lecture Notes in Physics, vol 95/1. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0052778
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DOI: https://doi.org/10.1007/BFb0052778
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